Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection

Permanent URI for this collectionhttps://hdl.handle.net/11147/7148

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Now showing 1 - 8 of 8
  • Article
    Citation - Scopus: 1
    Production and Dispersion of Plasma Functionalized Carbon Nanotubes in Pan Fiber Spinning Solution With Different Surfactants
    (MMOB Tekstil Mühendisleri Odası, 2022) Kutlu, Bengi; Akşit, Aysun; Özyüzer, Lütfi; Yağmurcukardeş, Nesli; Selamet, Yusuf
    In this study, the distribution of plasma-functionalized multi-walled carbon nanotubes in polyacrylonitrile nanocomposite fibers produced by wet spinning method using different surfactants (Triton-X and sodium dodecyl sulfate) was investigated. Firstly, we produced CNTs by chemical vapor deposition (CVD) technique. Secondly, low-pressure plasma functionalization of CNTs was realized. Finally, nanocomposite polyacrylonitrile fibers doped by CNTs were obtained using wet spinning technique. Properties of produced carbon nanotubes, functionalized carbon nanotubes and nanocomposite polyacrylonitrile fibers were examined by the analyses of chemical composition, surface structure, structural and mechanical properties.
  • Article
    Citation - WoS: 8
    Citation - Scopus: 10
    Experimental and Computational Investigation of Graphene/Sams Schottky Diodes
    (Elsevier Ltd., 2018) Aydın, Hasan; Bacaksız, Cihan; Yağmurcukardeş, Nesli; Karakaya, Caner; Mermer, Ömer; Can, Mustafa; Senger, Ramazan Tuğrul; Şahin, Hasan; Selamet, Yusuf
    We have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4″bis(diphenylamino)-1, 1′:3″-terphenyl-5′ carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-yl-1,1′:3′1′-terphenyl-5′ carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current–voltage (I–V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)–V dependences were determined as 2.13, 1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (R s ) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as π–π interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode.
  • Article
    Citation - WoS: 4
    Citation - Scopus: 4
    Effect of Aromatic Sams Molecules on Graphene/Silicon Schottky Diode Performance
    (Electrochemical Society, Inc., 2016) Yağmurcukardeş, Nesli; Aydın, Hasan; Can, Mustafa; Yanılmaz, Alper; Mermer, Ömer; Okur, Salih; Selamet, Yusuf
    Au/n-Si/Graphene/Au Schottky diodes were fabricated by transferring atmospheric pressure chemical vapor deposited (APCVD) graphene on silicon substrates. Graphene/n-Si interface properties were improved by using 5-[(3-methylphenyl)(phenyl) amino]isophthalic acid (MePIFA) and 5-(diphenyl)amino]isophthalic acid (DPIFA) aromatic self-assembled monolayer (SAM) molecules. The surface morphologies of modified and non-modified films were investigated by atomic force microscopy and scanning electron microscopy. The surface potential characteristics were obtained by Kelvin-probe force microscopy and found as 0.158 V, 0.188 V and 0,383 V as a result of SAMs modification. The ideality factors of n-Si/Graphene, n-Si/MePIFA/Graphene and n-Si/DPIFA/Graphene diodes were found as 1.07, 1.13 and 1.15, respectively. Due to the chain length of aromatic organic MePIFA and DPIFA molecules, also the barrier height φB values of the devices were decreased. While the barrier height of n-Si/Graphene diode was obtained as 0.931 eV, n-Si/MePIFA/Graphene and n-Si/DPIFA/Graphene diodes have barrier height of 0.820 and 0.720 eV, respectively.
  • Article
    Citation - WoS: 29
    Citation - Scopus: 31
    Electrical Properties of Sam-Modified Ito Surface Using Aromatic Small Molecules With Double Bond Carboxylic Acid Groups for Oled Applications
    (Elsevier Ltd., 2014) Can, Mustafa; Havare, Ali Kemal; Aydın, Hasan; Yağmurcukardeş, Nesli; Demir, Şerafettin; İçli, Sıddık; Okur, Salih
    5-[(3-Methylphenyl)(phenyl)amino]isophthalic acid (5-MePIFA) and 5-(diphenyl)amino]isophthalic acid (5-DPIFA) organic molecules were synthesized to form self-assembled monolayer on indium tin oxide (ITO) anode to enhance hole transport from ITO to organic hole transport layers such as TPD. The modified surface was characterized by scanning tunneling microscopy (STM). The change in the surface potential was measured by Kelvin probe force microscopy (KPFM). Our Kelvin probe force microscopy (KPFM) measurements showed that the surface potentials increased more than 100 mV with reference to bare indium tin-oxide. The results show that the threshold voltage on OLEDs with modified ITO is lowered significantly compared to OLEDs with unmodified ITO. The hole mobility of TPD has been estimated using space-charge-limited current measurements (SCLC).
  • Article
    Citation - WoS: 3
    Citation - Scopus: 4
    Electrical Characterizations of Schottky Diodes on Ito Modified by Aromatic Sams
    (Polish Academy of Sciences, 2013) Havare, A. Kemal; Okur, Salih; Yağmurcukardeş, Nesli; Can, M.; Aydın, H.; Şeker, M.; Demiç, Şerafettin
    In order to understand the electronic properties of the organic Schottky diode, ITO/TPD/Al and ITO/SAM/ TPD/Al organic Schottky devices were fabricated to obtain currentffvoltage characteristics. From the slopes and y-axis intercepts of the plots, the values of the ideality factor, barrier heights of the ITO/SAM/TPD/Al diode were determined as 2.03 and 0.56 eV, respectively. The surface characterizations of modified and unmodified ITO were performed via atomic force microscopy.
  • Article
    Citation - WoS: 1
    Citation - Scopus: 1
    Improvement of Anode/Htl Interface Properties Using Self-Assembled Monolayer in Organic Electronic Devices
    (Polish Academy of Sciences, 2013) Yaman, M.; Yağmurcukardeş, Nesli; Havare, A. Kemal; Aydın, H.; Ocakoğlu, Kasım; Okur, Salih
    Fabrication and characterization of highly effcient organic light-emitting diode with surface modification of indium tin oxide anodes by using self-assembled monolayer technique have been studied. Four different self-assembled molecules, K-28 ruthenium complex, octadecylamine hydrochloride, octadecyltrichlorosilane and mercaptohexdecanoic acid are used to modify ITO surface to improve the interface properties. Space charge limited currents measurements have been used to evaluate carrier mobility under steady state current. The results show that the surface properties such as the stability of ITO anode layer have significant effects on charge injection in organic light-emitting diode devices.
  • Article
    Citation - WoS: 70
    Citation - Scopus: 76
    Humidity-Sensing Properties of a Zno Nanowire Film as Measured With a Qcm
    (Elsevier Ltd., 2011) Erol, Ayşe; Okur, Salih; Yağmurcukardeş, Nesli; Arıkan, M. Çetin
    The humidity-sensing properties of ZnO nanowires synthesized by carbothermal catalyst-free vapor solid (VS) technique were studied. The morphology and the crystal structure were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. The humidity adsorption and desorption kinetics of the synthesized ZnO nanowires were investigated via quartz crystal microbalance (QCM) measurements. The observed positive frequency shift of ZnO nanowires when loaded on the QCM crystal under varying relative humidity conditions can be explained in terms of visco-elastic variations in their mechanical stiffness.
  • Article
    Citation - WoS: 35
    Citation - Scopus: 37
    Modification of Ito Surface Using Aromatic Small Molecules With Carboxylic Acid Groups for Oled Applications
    (Elsevier Ltd., 2011) Havare, Ali Kemal; Can, Mustafa; Demiç, Şerafettin; Okur, Salih; Kuş, Mahmut; Aydın, Hasan; Yağmurcukardeş, Nesli; Tarı, Süleyman
    4-[(3-Methylphenyl)(phenyl)amino]benzoic acid (MPPBA) was synthesized in order to facilitate the hole-injection in Organic Light Emitting Diodes (OLED). MPPBA was applied to form self-assembled monolayer (SAM) on indium tin oxide (ITO) anode to align energy-level at the interface between organic semiconductor material (TPD) and inorganic anode (ITO) in OLED devices. The modified surface was characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and Kelvin probe force microscopy (KPFM). KPFM was used to measure the surface potential and work function between the tip and the ITO surface modified by SAM technique using MPPBA. The OLED devices (ITO/MPPBA/TPD/Alq3/Al) fabricated with SAM-modified ITO substrates showed lower turn-on voltages and enhanced diode current compare to the OLED devices fabricated with bare ITO substrates.