Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Conference Object Investigation of In-Gap Field Enhancement at Terahertz Frequencies for a Metasurface Enhanced Sensor(Institute of Electrical and Electronics Engineers, 2021) Tugay, Halime; Altan, Hakan; Demirhan, Yasemin; Özyüzer, Lütfi; Sabah, CumaliThe arrangements of subwavelength inclusions in a metasurface can serve as an effective absorber for the terahertz region. When such an absorber is combined with a unique material, the absorption can induce effects that can lead to a change in the materials electrical properties. Vanadium dioxide shows a passive and reversible change from monoclinic insulator phase to metallic tetragonal rutile structure by using external stimuli such as temperature (340K), photo excitation, electric field, mechanical strain or magnetic field [1,2]. Upon absorption of the THz radiation, the high electric fields that are generated inside the gaps of the metasurface can serve as trigger points, as was shown previously using kV strength THz E-fields.Conference Object Spin Polarized Tunneling in Large Area Mesas of Superconducting Bi 2sr2cacu2o8+δ for the Generation of the Thz Waves(Institute of Electrical and Electronics Engineers Inc., 2009) Türkoğlu, Fulya; Şimşek, Yılmaz; Köseoğlu, Hasan; Demirhan, Yasemin; Meriç Polster, Zeynep; Özyüzer, LütfiRectangular intrinsic Josephson junction mesa structures of superconducting Bi2Sr2CaCu2O8+delta (Bi2212) can be used as a source of continuous, coherent and polarized terahertz (THz) radiation. THz emitting mesas are below a certain underdoped level of Bi2212. They have small Josephson critical current in contrast to optimally doped and overdoped Bi2212. We deposited Au/Co/Au multilayer top of mesa and obtained small critical current from mesas fabricated by as-grown Bi2212 single crystals due to injection of spin polarized current. The spin injection eliminates adjustment of doping level for successful THz emission.Conference Object Reactive Ion Beam Etching of Superconducting Bi2212 by Ta/Pr and Pr'/ta/pr Masks for the Generation of Thz Waves(Institute of Electrical and Electronics Engineers Inc., 2009) Köseoğlu, Hasan; Türkoğlu, Fulya; Demirhan, Yasemin; Meriç Polster, Zeynep; Özyüzer, LütfiGeneration of powerful THz radiation from intrinsic Josephson Junctions (Ills) of Bi(2)Sr(2)CaCu(2)O(8+delta) (Bi2212) may require mesas with large lateral dimension. However, there are difficulties in fabrication of perfect rectangular mesas. Mesa lateral angles should be close to 90 degrees to obtain IJJs with same planar dimensions for synchronization of IJJs. Since thick photoresist (PR) layer shades the lateral dimension of mesa during ion beam etching, we patterned Ta/PR and PR'/Ta/PR masks on Bi2212 and used selective ion etching to overcome this problem. The reactive ion beam etchings have done with ion beam of Ar, N(2) and O(2) and we have obtained mesas about 1 mu m with lateral angle of approximately 50 to 75 degrees which is better than the mesas fabricated with single layer mask.Conference Object Terahertz Transmission Through Patterened Vanadium Oxide Thin Films on Dielectric Substrates(SCITEPRESS, 2017) Akkaya, M.; Demirhan, Yasemin; Yüce, Hürriyet; Aygün, Gülnur; Özyüzer, Lütfi; Sabah, Cumali; Altan, HakanPatterned and unpatterned films of vanadium oxide grown on dielectric substrates such as fused silica and sapphire were grown and analysed by varying the temperature using terahertz time domain spectroscopy. After investigating the critical transition temperature near 340K, a well-known cross-shaped pattern was studied to observe any resonances upon transmission. Due to the poor conductivity of the films the frequency selective nature of the structure was not observed, however an etalon effect could be seen in the sapphire substrate as opposed to the fused silica substrate above the critical temperature. Dependence of the refractive index difference between substrates upon transmission of the THz pulse is likely in explaining this observed difference.Book Part Future Applications of Artificially-Synthesized Organic Molecules Containing Transition-Metal Atoms(Elsevier, 2018) Mayda, Selma; Kandemir, Zafer; Bulut, NejatArtificially-synthesized organic molecules which contain transition-metal atoms offer new possibilities for applications in the electronics, pharmaceutical, and chemical industries. Hence, developing an understanding of the electronic properties of this kind of organic molecules is important. With this purpose, here we study the electronic properties of metalloproteins, metalloenzymes, and Ru-based dye molecules as examples for this kind of organic molecules. In particular, we perform combined Hartree-Fock (HF) and quantum Monte Carlo (HF+QMC) calculations, as well as combined density functional theory (DFT) and QMC (DFT+QMC) calculations to study the electronic properties of these molecules. Our results show that new electronic states named as impurity bound states (IBS) form in metalloproteins, metalloenzymes, and Ru-based dye molecules. We show that the electron occupancy of IBS is critically important in determining the low-energy electronic properties of these molecules. In this respect, the IBS may play a central role in developing new applications based on artificially-synthesized organic molecules containing transition-metal atoms. © 2018 Elsevier Inc. All rights reserved.Conference Object Citation - Scopus: 1Cleo®/Europe - Eqec 2015, an Indium Tin Oxide Metamaterial Filter for the Terahertz Regime: Design, Fabrication and Characterization(Optical Society of America (OSA), 2015) Takan, Taylan; Nebioğlu, Mehmet Ali; Kurt, Metin; Demirhan, Yasemin; Özyüzer, Lütfi; Sabah, Cumali; Altan, Hakan[No abstract available]Conference Object Reversible Energy Transfer Between a Single Defect in Hbn and Graphene(OSA - The Optical Society, 2019) Özçeri, Elif; Arı, Ozan; Balcı, Sinan; Kocabaş, Coşkun; Ateş, SerkanWe present a reversible energy transfer between a single defect in hBN and graphene. Dynamic control of Fermi level of graphene results in switching on and off single photon emission from a single quantum emitter. © OSA 2019 © 2019 The Author(s)Conference Object Influence of Electron-Phonon Interactions on the Spectral Properties of Defects in Hexagonal Boron Nitride(OSA - The Optical Society, 2019) Arı, Ozan; Fırat, Volkan; Polat, Nihat; Çakır, Özgür.; Ateş, SerkanWe present temperature-dependent micro-PL studies on a single defect in hexagonal boron nitride. A zero-phonon line emission accompanied by Stokes and anti-Stokes phonon sidebands (˜ 6.5 meV) with a Debye-Waller factor of 0.59 is observed. © OSA 2019 © 2019 The Author(s)Conference Object Stress-Energy Connection: Degravitating the Vacuum Energy(World Scientific Publishing Co. Pte Ltd, 2013) Demir, Durmuş AliThis talk summarizes recent studies on the gravitational properties of vacuum energy in a non-Riemannian geometry formed by the stress-energy tensor of vacuum, matter and radiation. Postulating that the gravitational effects of matter and radiation can be formulated by an appropriate modification of the spacetime connection, we obtain varied geometro-dynamical equations which properly comprise the usual gravitational field equations with, however, Planck-suppressed, non-local, higher-dimensional additional terms. The prime novelty brought about by the formalism is that, the vacuum energy does act not as the cosmological constant but as the source of the gravitational constant. The formalism thus deafens the cosmological constant problem by channeling vacuum energy to gravitational constant. Nevertheless, quantum gravitational effects, if any, restore the problem via the graviton and graviton-matter loops, and the mechanism proposed here falls short of taming such contributions to cosmological constant.Article Citation - WoS: 2Citation - Scopus: 2Scanning Probe Oxidation Lithography on Ta Thin Films(American Scientific Publishers, 2008) Okur, Salih; Büyükköse, Serkan; Tarı, SüleymanA Semi-Contact Scanning Probe Lithography Technique (SC-SPL) has been applied to create nano-oxide patterns on Ta thin films grown by DC magnetron sputtering method on SiO 2/Si substrates. The height and linewidth profiles of nano-oxide lines created by a conductive AFM tip on Ta film surfaces were measured as a function of applied voltage, oxidation time, humidity, and tip apex curvature. The AFM surface measurements show that the height of the oxides increases linearly with increasing voltage; but there was no oxide growth, when less than 4 V was applied even at 85% relative humidity. Electrical measurements were performed and the resistivities of the TaO x layer and Ta film were obtained as 5.76 × 10 8 and 1.4 × 10 5 Ohm-cm, respectively.