Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Conference Object Citation - Scopus: 1Fs Fbgs as Probes To Monitor Thermal Regeneration Mechanisms(SPIE, 2019) Chah, K.; Kinet, D.; Yüksel, Kıvılcım; Caucheteur, C.This paper shows that fiber Bragg gratings written in standard single mode optical fiber with IR femtosecond pulses and point-by-point technique are high temperature resistant (< 1000 degrees C). Moreover, after calibration process, these gratings can be used as a reference to study and discriminate between different high temperature annealing mechanisms involved in other types of gratings and/or fibers. Here we have considered the regeneration process of gratings written by UV laser in boron/germanium co-doped single mode optical fiber. Hence, the monitoring of grating strength and differential wavelength shift between femtosecond and type-I gratings during annealing cycle yields the wavelength shift due to the annealing of doping (mainly boron) and UV-related defects and their relative contributions to the regeneration mechanism.Conference Object Citation - WoS: 2Citation - Scopus: 3The Effects of Oxide Thickness on the Interface and Oxide Properties of Metal-Tantalum Pentoxide-Si (mos) Capacitors(National Institute of Optoelectronics, 2005) Özdağ, Pınar; Atanassova, Elena; Güneş, MehmetHigh dielectric constant tantalum-pentoxide insulating layers were prepared on p-type (100) crystalline silicon wafers using an RF magnetron sputtering technique. Then, metal-oxide-semiconductor (Al-Ta 2O 5-Si) structures were formed with various oxide thickness from 15 to 25 nm. Devices were characterized using the high frequency capacitance-voltage (C-V) spectroscopy method. From the analysis of the high frequency C-V curves, non-ideal effects such as oxide charges and interface trap densities have been evaluated. The results for Ta 2O 5 layers have been compared with those for conventional SiO 2 layers. Interface trap densities were found to be 1.6 ± 0.4×10 12 eV -1 cm -2 for Ta 2O 5 and about 2×10 11 eV -1 cm -2 for SiO 2 insulating layers. There was no clear thickness dependence of the interface trap densities for the Ta 2O 5 insulating layers.