WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7150
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Conference Object Citation - WoS: 1Citation - Scopus: 6The Use of Chipless Sensors With Rfid for Condition Monitoring(Institute of Electrical and Electronics Engineers Inc., 2018) Biliç, H. Gökay; Büyüköztekin, Tarık; Özdemir, SerhanThis paper presents the development phases and overview of developing research in the area of RFID condition monitoring, focusing on chipless sensors especially use in strain and temperature sensing applications. Classification of RFID sensors and smart material fundamentals are reviewed. The compact and feasible design of RFID sensors will be considered, as well as with the effect of different material usage. Finally, the use of chipless sensors with different condition monitoring applications and their challenges are investigated.Article Citation - WoS: 105Citation - Scopus: 105Pentagonal Monolayer Crystals of Carbon, Boron Nitride, and Silver Azide(American Institute of Physics, 2015) Yağmurcukardeş, Mehmet; Şahin, Hasan; Kang, J.; Torun, E.; Peeters, François M.; Senger, Ramazan TuğrulIn this study, we present a theoretical investigation of structural, electronic, and mechanical properties of pentagonal monolayers of carbon (p-graphene), boron nitride (p-B2N4 and p-B4N2), and silver azide (p-AgN3) by performing state-of-the-art first principles calculations. Our total energy calculations suggest feasible formation of monolayer crystal structures composed entirely of pentagons. In addition, electronic band dispersion calculations indicate that while p-graphene and p-AgN3 are semiconductors with indirect bandgaps, p-BN structures display metallic behavior. We also investigate the mechanical properties (in-plane stiffness and the Poisson's ratio) of four different pentagonal structures under uniaxial strain. p-graphene is found to have the highest stiffness value and the corresponding Poisson's ratio is found to be negative. Similarly, p-B2N4 and p-B4N2 have negative Poisson's ratio values. On the other hand, the p-AgN3 has a large and positive Poisson's ratio. In dynamical stability tests based on calculated phonon spectra of these pentagonal monolayers, we find that only p-graphene and p-B2N4 are stable, but p-AgN3 and p-B4N2 are vulnerable against vibrational excitations.Article Citation - WoS: 2Citation - Scopus: 2Znte/Gaas(2 1 1)b Heterojunction Valence Band Discontinuity Measured by X-Ray Photoelectron Spectroscopy(Elsevier Ltd., 2011) Wang, X. J.; Tarı, Süleyman; Sporken, R.; Sivananthan, S.Thin ZnTe layers were grown by molecular beam epitaxy on single crystal GaAs(2 1 1)B substrates. Reflection high energy electron diffraction monitored the deoxidation of substrate and entire growth process. Valence band offset was calculated with X-ray photoelectron spectroscopy. Also interface formation of the ZnTe/GaAs was studied. Analysis shows that interface is abrupt and calculated valance band offset is 0.25±0.1 eV and indicates type I alignment. The experimental result agrees well with the theoretical predictions involving interface dipole effect as well as electron affinity rule.