WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7150
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Article Citation - WoS: 24Citation - Scopus: 27Atomic–scale Investigations of Passive Film Formation on Ti-Nb Alloys(Elsevier, 2023) Çaha, İhsan; Alves, Alexandra C.; Chirico, Caterina; Maria Pinto, Ana; Tsipas, Sophia; Gordo, Elena; Bondarchuk, Oleksandr; Leonard Deepak, Francis; Toptan, FatihThis study extensively investigates the passive film formation mechanisms on Ti-xNb alloys by using several electrochemical techniques, including electrochemical impedance spectroscopy (EIS) before and after potentiostatic polarization at the passive zone, and Mott-Schottky (MS) measurements in 9 g/l NaCl electrolyte at 37 °C, together with X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) analysis. Overall, the Ti40Nb presented lower corrosion resistance due to a thinner passive film as compared to commercial pure Ti (grade 2) and Ti12Nb. The passive film formed on Ti12Nb and Ti40Nb alloys at a steady-state condition (+0.5 VAg/AgCl for 60 min) is composed of amorphous phases of TiO, Ti2O3, TiO2, Nb2O5 and crystalline phases of TiO2 (anatase) and Nb2O5. © 2022 Elsevier B.V.Article Citation - WoS: 8Citation - Scopus: 8An Interface Study of Crystalline Fe/Ge Multilayers Grown by Molecular Beam Epitaxy(Elsevier Ltd., 2011) Tarı, SüleymanFe/Ge multilayers were grown on single crystal Ge(0 0 1) substrates by molecular beam epitaxy. The structural, electronic and magnetic properties of Fe/Ge have been studied. The analysis shows that Fe grows in a layer-by-layer epitaxial growth mode on Ge(0 0 1) substrates at 150 ◦C and no intermixing has been observed. Growth of a crystalline Ge film at 150 ◦C on a single crystal Fe film has been observed. At this temperature Ge films grow by means of the island growth mode according to reflection of high energy electron diffraction patterns. Fe layers of 36nm thickness, deposited at 150 ◦C on Ge(0 0 1) substrates, show two magnetization reversal values indicating the growth of Fe in two different crystal orientations. 36nm thick Fe and Ge layers grown at 150 ◦C in Ge/Fe/Ge/Fe/Ge(0 0 1) sequence shows ferromagnetic behavior, however, the same structure grown at 200 ◦C shows paramagnetic behavior.Article Citation - WoS: 2Citation - Scopus: 2Znte/Gaas(2 1 1)b Heterojunction Valence Band Discontinuity Measured by X-Ray Photoelectron Spectroscopy(Elsevier Ltd., 2011) Wang, X. J.; Tarı, Süleyman; Sporken, R.; Sivananthan, S.Thin ZnTe layers were grown by molecular beam epitaxy on single crystal GaAs(2 1 1)B substrates. Reflection high energy electron diffraction monitored the deoxidation of substrate and entire growth process. Valence band offset was calculated with X-ray photoelectron spectroscopy. Also interface formation of the ZnTe/GaAs was studied. Analysis shows that interface is abrupt and calculated valance band offset is 0.25±0.1 eV and indicates type I alignment. The experimental result agrees well with the theoretical predictions involving interface dipole effect as well as electron affinity rule.Article Citation - WoS: 14Citation - Scopus: 18Xps Study of Pulsed Nd:yag Laser Oxidized Si(Elsevier Ltd., 2006) Özyüzer, Gülnur Aygün; Aygün, Gülnur; Atanassova, Elenada A.; Kostov, K.; Turan, RaşitX-ray photoelectron spectra (XPS) of thin SiO2 layers grown by pulsed Nd:YAG laser at a substrate temperature of 748 K are presented. The peak decomposition technique combined with depth profiling is employed to identify the composition and chemical states of the film structure. It is established that the oxide is non-stoichiometric, and contains all oxidation states of Si in different amounts throughout the film. The interface Si/laser-grown oxide is not abrupt, and the coexistence of Si2O3 and Si2O suboxides in a relatively wide interfacial region is found. It is concluded that post-oxidation annealing is necessary in order to improve the microstructure of both oxide and near interface region.