WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

Permanent URI for this collectionhttps://hdl.handle.net/11147/7150

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  • Article
    Citation - WoS: 1
    Investigation of the Electrical Parameters of the Organic Diode Modified With 4-[(3 Benzoic Acid
    (Electrochemical Society, Inc., 2016) Havare, A. Kemal; Can, Mustafa; Yağmurcukardeş, Nesli; Yiğit, Mesude Zeliha; Aydın, Hasan; Okur, Salih; Demiç, Şerafettin; İçli, Sıddık
    4-[(3-Methylphenyl)(phenyl)amino]benzoic acid (MPPBA) self-assembled monolayer (SAM) molecules as hole injection is formed on p and n type Si and on indium-tin oxide (ITO) electrodes to investigate the effect on the electrical parameters of hole only organic device. The hole mobility improvement of organic device was attributed to an intermediate energy level formed between hole transport materials (HTL) (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine -NPB) and ITO when forming an ultrathin MPPBA layer, leading to increase of carrier mobility of the device. Space charge limited current (SCLC) technique is used to estimate the mobility of the NPB formed at the interface metal/organic Ohmic contact. The hole mobility of ITO/NPB/Al and ITO/MPPBA/NPB/Al devices were obtained as 1.80 x 10(-6) and 1.76 x 10(-3) cm(2)/Vs, at 1350 E (V/cm)(1/2) applied electric field, respectively. SAM modified devices has lower barrier height values. The electronic characteristic parameters of the ITO/(with or without MPPBA)/NPB/Al, Au/n-Si(or p-Si)/(with or without MPPBA)/Au contacts were calculated using current-voltage (I-V) measurements by Schottky type carrier injection. (C) The Author(s) 2016. Published by ECS.
  • Article
    Citation - WoS: 3
    Citation - Scopus: 4
    Electrical Characterizations of Schottky Diodes on Ito Modified by Aromatic Sams
    (Polish Academy of Sciences, 2013) Havare, A. Kemal; Okur, Salih; Yağmurcukardeş, Nesli; Can, M.; Aydın, H.; Şeker, M.; Demiç, Şerafettin
    In order to understand the electronic properties of the organic Schottky diode, ITO/TPD/Al and ITO/SAM/ TPD/Al organic Schottky devices were fabricated to obtain currentffvoltage characteristics. From the slopes and y-axis intercepts of the plots, the values of the ideality factor, barrier heights of the ITO/SAM/TPD/Al diode were determined as 2.03 and 0.56 eV, respectively. The surface characterizations of modified and unmodified ITO were performed via atomic force microscopy.
  • Article
    Citation - WoS: 1
    Citation - Scopus: 1
    Improvement of Anode/Htl Interface Properties Using Self-Assembled Monolayer in Organic Electronic Devices
    (Polish Academy of Sciences, 2013) Yaman, M.; Yağmurcukardeş, Nesli; Havare, A. Kemal; Aydın, H.; Ocakoğlu, Kasım; Okur, Salih
    Fabrication and characterization of highly effcient organic light-emitting diode with surface modification of indium tin oxide anodes by using self-assembled monolayer technique have been studied. Four different self-assembled molecules, K-28 ruthenium complex, octadecylamine hydrochloride, octadecyltrichlorosilane and mercaptohexdecanoic acid are used to modify ITO surface to improve the interface properties. Space charge limited currents measurements have been used to evaluate carrier mobility under steady state current. The results show that the surface properties such as the stability of ITO anode layer have significant effects on charge injection in organic light-emitting diode devices.
  • Article
    Citation - WoS: 17
    Citation - Scopus: 21
    Humidity Sensing Properties of Chitosan by Using Quartz Crystal Microbalance Method
    (American Scientific Publishers, 2012) Havare, A. Kemal; İlgü, Hüseyin; Okur, Salih; Şanlı Mohamed, Gülşah
    Humidity adsorption kinetics of chitosan films was investigated by quartz crystal microbalance (QCM) technique. In this study, chitosan was synthesized from chitin by deacetylation process in 2.0% (v/v) acetic acid solution and then coated on QCM to measure humidity response. The Langmuir model was used to determine the adsorption rates and Gibbs free energy for various relative humidity between 11% and 94%. The average Gibbs free energy for adsorption was obtained as 12.93 kJ/mol. Our reproducible experimental results show that chitosan films are very sensitive to relative humidity changes at room temperature. Copyright © 2012 American Scientific Publishers All rights reserved.