Materials Science and Engineering / Malzeme Bilimi ve Mühendisliği

Permanent URI for this collectionhttps://hdl.handle.net/11147/4719

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Author: search.filters.author.Can, M.Subject: search.filters.subject.Characterization

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  • Article
    Citation - WoS: 3
    Citation - Scopus: 4
    Electrical Characterizations of Schottky Diodes on Ito Modified by Aromatic Sams
    (Polish Academy of Sciences, 2013) Havare, A. Kemal; Okur, Salih; Yağmurcukardeş, Nesli; Can, M.; Aydın, H.; Şeker, M.; Demiç, Şerafettin
    In order to understand the electronic properties of the organic Schottky diode, ITO/TPD/Al and ITO/SAM/ TPD/Al organic Schottky devices were fabricated to obtain currentffvoltage characteristics. From the slopes and y-axis intercepts of the plots, the values of the ideality factor, barrier heights of the ITO/SAM/TPD/Al diode were determined as 2.03 and 0.56 eV, respectively. The surface characterizations of modified and unmodified ITO were performed via atomic force microscopy.