Photonics / Fotonik

Permanent URI for this collectionhttps://hdl.handle.net/11147/2590

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  • Research Project
    Fullerenlere Alternatif Yeni Asetil Köprülü Perilendiimidlerin Sentezi ve Akseptör Özelliklerinin Fotofiziksel Süreçlerle Araştırılması
    (2019) Varlıklı, Canan
    Organik güneş hücresi (OGH) nde elektrik üretimi, donörün ışığı soğruması ekziton oluşumu, ekziton difüzyonu, ayrışması ve elektron transfer süreçleri, elektron ve boşlukların katot ve anotta toplanması ile gerçekleşir. Literatürde birçok farklı elektron verici (D) ve alıcı (A) malzeme geliştirilmektedir. A malzemeleri içerisinde en sık kullanılanlardan birisi fulleren ve türevleridir. Bu türevlerin üretimi oldukça zor ve yüksek maliyetlidir. Bu sebeple, literatürde son 10 yıl da, fulleren içermeyen OGHne olan ilginin arttığı görülmektedir. Perilendiimidler (PDIler), görünür bölgedeki yüksek molar soğurma katsayıları ve elektron ilgileri ile dikkat çekmektedir. Ancak, PDIlerin genel organik çözgenlerdeki çözünürlükleri düşük, agregatlaşma eğilimleri fazladır. Güçlü perilen-perilen etkileşimleri film fazında mikroboyutlara ulaşabilecek kristalitler oluşturabilmektedir. Bu durum ise, ekziton haraketliliğini ve elektron ve boşlukların elektrotlarda toplanmasını olumsuz etkilemektedir. Bu proje kapsamında, izomerik saflıkta 1,6- ve 1,7- bis[(trifenil)(4-etinil-fenil)silan)- N,N′-di(2- etilhekzil)-perilen-3, 4, 9, 10-tetrakarboksilikasit diimid [1,6 ve 1,7-Di(TPhSi)APDI] sentezlenmiş, 1H ve 13C NMR ile karakterize edilmiştir. Saf izomerlerin absorpsiyon ve fotoluminesans özellikleri, indirgenme potansiyelleri, en yüksek enerjili elektron içeren moleküler orbital ve en düşük enerjili elektron içermeyen moleküler orbital enerji seviyeleri tespit edilmiştir. Referans olarak sentezlenen N,N′-di(2-etilhekzil)-perilen-3, 4, 9, 10- tetrakarboksilikasit diimid [PDI(2EH)] ve 1,6- ve 1,7-Di-TPhSiAPDI(2EH) in çözelti ve film fazı fotofiziksel özellikleri incelenmiştir. Yeni sentezlenen PDI türevlerinin ve ticari fulleren türevinin (PCBM), ticari bir donör olan poli[N-9'-heptadekanil-2,7-karbazol-alt-5,5-(4',7'-di-2- thienyl-2',1',3'-benzothiadiazole)] (PCDTBT) ile çözelti ve film fazındaki etkileşimleri izlenerek, karşılaştırılmıştır. Filmlerin morjolojik özellikleri atomik kuvvet mikroskobu ölçümleri ile tespit edilmiştir. 1,7-Di-TPhSiAPDI(2EH) in agregatlaşma eğiliminin ve fotokararlılığının PDI(2EH) den düşük, soğurma dalga boyunun, elektron ilgisinin ve yaşam ömrünün PDI(2EH) den yüksek ve molar soğurma katsayısının PDI(2EH) ile aynı seviyede olduğu tespit edilmiştir. Bu özellikleri ile yeni molekülün uygun D malzeme kullanımı ile hazırlanacak OGH aygıtında, PDI(2EH) den yüksek verim vereceği düşünülmüştür.
  • Article
    Single Layer Res2h2: Stability, Raman Activity and Electronic Properties
    (Eskişehir Teknik Üniversitesi, 2018) Ünsal, Elif; Şahin, Hasan
    In this study, the structural, vibrational and electronic properties of the hydrogenated single layer of ReS2 are investigated byperforming the first principle calculations based on density functional theory. We found that the characteristic properties ofthe monolayer ReS2 can be manipulated upon the hydrogen functionalization. As the monolayer ReS2, the ReS2H2 hasdistorted 1T phase; however, the bonding in Re slab significantly varies with the hydrogenation. Our results demonstrate thatthe full-surface hydrogenation leads to an expansion in lattice and the Re4 tetramer-chains in the monolayer ReS2 areseparated into two dimers in the hydrogenated monolayer. It is calculated that the dynamically stable monolayer of ReS2H2has 26 Raman-active vibrational modes. Constant volume specific heat calculations are also performed and the resultsindicate that at high temperature, the monolayer ReS2 approaches to limit of 3R before the monolayer ReS2H2. By performingthe electronic band structure calculations, it is shown that when the ReS2 surface is fully hydrogenated, there occurs a directto indirect band gap transition and the semiconducting hydrogen-induced monolayer has a band gap of 0.74 eV.
  • Patent
    Silicon-Based Emitter Compound
    (Espacenet, 2018)
    The present invention relates to emitter compounds E of formula or salts thereof based on a triazine core, substituted with at least one moiety of formula: and at least one donor moiety. Further, the present invention also refers to a light-emitting layer B comprising the emitter compound E and to an opto-electronic device OD comprising such light-emitting layer B. Moreover, the present invention relates to a method for generating light of a desired wavelength range by means of the opto-electronic device OD.
  • Conference Object
    Reversible Energy Transfer Between a Single Defect in Hbn and Graphene
    (OSA - The Optical Society, 2019) Özçeri, Elif; Arı, Ozan; Balcı, Sinan; Kocabaş, Coşkun; Ateş, Serkan
    We present a reversible energy transfer between a single defect in hBN and graphene. Dynamic control of Fermi level of graphene results in switching on and off single photon emission from a single quantum emitter. © OSA 2019 © 2019 The Author(s)
  • Conference Object
    Citation - WoS: 3
    Citation - Scopus: 2
    Fabrication and Characterization of a Solution Processed Flexible Thermal Sensor by Using Chemically Synthesized Go and Rgo
    (Institute of Electrical and Electronics Engineers Inc., 2019) Bozkurt, Hakan; Diker, Halide; Varlıklı, Canan
    Graphene oxide (GO) was reduced by ascorbic acid which is an environmental-friendly reductant and obtained sample was named as reduced GO (rGO). Stable dispersions of GO and rGO were prepared in N,N-Dimethylformamide (DMF). Compared to GO sample, rGO was determined to have more thermal stability, smaller sheet size and lower surface energy. GO and rGO dispersions were drop-casted on aluminum (Al) coated acetate substrate and used as thermal sensor. Fabricated sensors were tested from 25 °C to 150 °C. The sensors fabricated with GO, were not stabile against driven temperature changes. However, rGO ones, presented no thermal hysteresis effect after the first heating step. This sensor (Al/rGO/Al) acted like an NTC (Negative Temperature Coefficient) thermistor. The resistance of the rGO sensor was changed between 42 k? to 25 k? depending on the test temperature range (25 °C to 150 °C). Average beta value was calculated as 519.7649 K. © 2019 IEEE.
  • Conference Object
    Bir Ameliyat Robotunun Denetimi için Basitleştirilmiş Dinamik Modeli
    (Otomatik Kontrol Türk Milli Komitesi, 2018) Ayit, Orhan; Yaşır, Abdullah; Vardarlı, Eren; Kiper, Gökhan; Dede, Mehmet İsmet Can
    Bu çalışmanın temel konusu minimal invaziv tipi bir ameliyat olan endoskopik hipofiz tümörü ameliyatında kullanılan endoskopun hareket denetimi için geliştirilen robotik sistemdir. Geliştirilen sistemin bu bildiride ele alınan kısmı, ameliyat sırasında sadece ameliyat bölgesi içinde endoskopu cerrahın anlık isteklerine göre yönlendiren, aktif robot yapısıdır. Söz konusu robot uzak hareket merkezli, 3 serbestlik dereceli, paralel kinematik mimariye sahiptir. Bu çalışmada robotun denetimi için uygun görülen hesaplanmış tork yöntemi için gerekli robotun dinamik analizi sunulmaktadır. Denetim algoritmasının yüksek frekansta çalışabilmesi için dinamik denklemlerde yapılan basitleştirmeler ve bunun sonucunda elde edilen hesaplama zamanı sunulmaktadır.
  • Book Part
    Citation - WoS: 6
    Citation - Scopus: 5
    Strain engineering of 2D materials
    (Springer Verlag, 2017) Cahangirov, Seymur; Şahin, Hasan; Le Lay, Guy; Rubio, Angel
    When bulk structures are thinned down to their monolayers, degree of orbital interactions, mechanical properties and electronic band dispersion of the crystal structure become highly sensitive to the amount of applied strain. The source of strain on the ultra-thin lattice structure can be (1) an external device or a flexible substrate that can stretch or compress the structure, (2) the lattice mismatch between the layer and neighboring layers or (3) stress induced by STM or AFM tip.
  • Book Part
    Citation - WoS: 7
    Citation - Scopus: 10
    Germanene, Stanene and Other 2d Materials
    (Springer Verlag, 2017) Cahangirov, Seymur; Şahin, Hasan; Le Lay, Guy; Rubio, Angel
    Germanene and stanene (also sometimes written stannene or called tinene) are 2D materials composed of germanium and tin atoms respectively arranged in a honeycomb structure similarly to graphene and silicene. The atomic structure of freestanding germanene and stanene is buckled like in the case of silicene (see Figure 2.4DFT calculations (Kresse and Joubert, Phys Rev B 59:1758-1775, 1999) performed by projector augmented wave (PAW) method (BlÖchl, Phys Rev B 50:17953-17979, 1994) and adopting PBE functional (Perdew et al. Phys Rev Lett 77:3865-3868, 1996) result in a lattice constants 4.06 and 4.67Å and buckling heights of 0.69 and 0.85Å for germanene and stanene respectively.
  • Book Part
    Citation - Scopus: 1
    Multilayer Silicene
    (Springer Verlag, 2017) Cahangirov, Seymur; Şahin, Hasan; Le Lay, Guy; Rubio, Angel
    Silicon does not have a naturally occurring layered allotrope like graphite. However, it is possible to grow monolayer silicene on substrates, as we have seen in Chap. 3. Extending this idea further, one may wonder whether it is possible to synthesize layered silicon structures by continuing the growth started as a monolayer silicene. In this chapter we discuss the experimental and theoretical works that are based on this idea of multilayer silicene growth.
  • Book Part
    Citation - WoS: 1
    Citation - Scopus: 2
    Silicene on Ag Substrate
    (Springer Verlag, 2017) Cahangirov, Seymur; Şahin, Hasan; Le Lay, Guy; Rubio, Angel
    The isolation of graphene sheets from its parent crystal graphite has given the kick to experimental research on its prototypical 2D elemental cousin, silicene (Brumfiel 2013). Unlike graphene, silicene lacks a layered parent material from which it could be derived by exfoliation, as mentioned in Chap. 2. Hence, the efforts of making the silicene dream a reality were focused on epitaxial growth of silicene on substrates. The first synthesis of epitaxial silicene on silver (111) (Vogt et al. 2012; Lin et al. 2012) and zirconium diboride templates (Fleurence et al. 2012) and next on an iridium (111) surface (Meng et al. 2013), has boosted research on other elemental group IV graphene-like materials, namely, germanene and stanene (Matthes et al. 2013; Xu et al. 2013). The boom is motivated by several new possibilities envisaged for future electronics, typically because of the anticipated very high mobilities for silicene and germanene (Ye et al. 2014), as well as potential optical applications (Matthes et al. 2013). It is also fuelled by their predicted robust 2D topological insulator characters (Liu et al. 2011; Ezawa 2012) and potential high temperature superconductor character (Chen et al. 2013; Zhang et al. 2015). One of the most promising candidates as a substrate is Ag because from the studies of the reverse system, where Ag atoms were deposited on silicon substrate, it was known that Ag and silicon make sharp interfaces without making silicide compounds (Le Lay 1983). Indeed, studies on synthesis and characterization of silicene is mainly focused on using Ag(111) as substrates and hence we think it is important to understand this particular system. In this chapter, we present the experimental and theoretical studies investigating the atomic and electronic structure of silicene on Ag substrates.