Tarı, Süleyman
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Tari, Süleyman
Tari, S
Tari, S.
Tari, Suleyman
Tarı, S
Tarı, S.
Tari, S
Tari, S.
Tari, Suleyman
Tarı, S
Tarı, S.
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Main Affiliation
04.05. Department of Pyhsics
Status
Former Staff
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Sustainable Development Goals
1NO POVERTY
0
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2ZERO HUNGER
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3GOOD HEALTH AND WELL-BEING
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4QUALITY EDUCATION
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5GENDER EQUALITY
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6CLEAN WATER AND SANITATION
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7AFFORDABLE AND CLEAN ENERGY
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8DECENT WORK AND ECONOMIC GROWTH
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9INDUSTRY, INNOVATION AND INFRASTRUCTURE
1
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10REDUCED INEQUALITIES
0
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11SUSTAINABLE CITIES AND COMMUNITIES
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12RESPONSIBLE CONSUMPTION AND PRODUCTION
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13CLIMATE ACTION
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14LIFE BELOW WATER
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15LIFE ON LAND
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16PEACE, JUSTICE AND STRONG INSTITUTIONS
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17PARTNERSHIPS FOR THE GOALS
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Documents
17
Citations
290
h-index
10
This researcher does not have a WoS ID.
Scholarly Output
15
Articles
11
Views / Downloads
10999/6871
Supervised MSc Theses
4
Supervised PhD Theses
0
WoS Citation Count
170
Scopus Citation Count
169
Patents
0
Projects
2
WoS Citations per Publication
11.33
Scopus Citations per Publication
11.27
Open Access Source
15
Supervised Theses
4
| Journal | Count |
|---|---|
| Applied Surface Science | 4 |
| Journal of Alloys and Compounds | 1 |
| Journal of Applied Polymer Science | 1 |
| Journal of Nanoscience and Nanotechnology | 1 |
| Journal of Optoelectronics and Advanced Materials | 1 |
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15 results
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Now showing 1 - 10 of 15
Article Citation - WoS: 35Citation - Scopus: 37Modification of Ito Surface Using Aromatic Small Molecules With Carboxylic Acid Groups for Oled Applications(Elsevier Ltd., 2011) Havare, Ali Kemal; Can, Mustafa; Demiç, Şerafettin; Okur, Salih; Kuş, Mahmut; Aydın, Hasan; Yağmurcukardeş, Nesli; Tarı, Süleyman4-[(3-Methylphenyl)(phenyl)amino]benzoic acid (MPPBA) was synthesized in order to facilitate the hole-injection in Organic Light Emitting Diodes (OLED). MPPBA was applied to form self-assembled monolayer (SAM) on indium tin oxide (ITO) anode to align energy-level at the interface between organic semiconductor material (TPD) and inorganic anode (ITO) in OLED devices. The modified surface was characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and Kelvin probe force microscopy (KPFM). KPFM was used to measure the surface potential and work function between the tip and the ITO surface modified by SAM technique using MPPBA. The OLED devices (ITO/MPPBA/TPD/Alq3/Al) fabricated with SAM-modified ITO substrates showed lower turn-on voltages and enhanced diode current compare to the OLED devices fabricated with bare ITO substrates.Article Citation - WoS: 21Citation - Scopus: 22Structural and Electrical Characterization of the Nickel Silicide Films Formed at 850 °c by Rapid Thermal Annealing of the Ni/Si(1 0 0) Films(Elsevier Ltd., 2010) Utlu, G.; Artunç, N.; Budak, S.; Tarı, SüleymanNickel di-silicide formation induced by RTA process at 850 °C for 60 s in the Ni/Si(1 0 0) systems are investigated as a function of the initial Ni film thickness of 7-89 nm using XRD, RBS, SEM, X-SEM and AFM. Based on the XRD and RBS data, in the silicide films of 400-105 nm, NiSi and NiSi2 silicide phases co-exist, indicating that Ni overlayer is completely transformed to NiSi and NiSi2 silicide phases. SEM reveals that these films consist of large grains for co-existence of NiSi2 and NiSi phases, separated from one another by holes, reflecting that NiSi2 grows as islands in NiSi matrix. These films have low sheet resistance, ranging from 1.89 to 5.44 Ω/□ and good thermal stability. For thicknesses ≤ 80 nm RBS yields more Si-rich silicide phases compared to thicker films, whereas SEM reveals that Si-enriched silicide islands with visible holes grow in Si matrix. As the film thickness decreases from 400 to 35 nm, AFM reveals a ridge-like structure showing a general trend of decreasing average diameter and mean roughness values, while sheet resistance measurements exhibit a dramatic increase ranging from 1.89 to 53.73 Ω/□. This dramatic sheet resistance increase is generated by substantial grain boundary grooving, followed by island formation, resulting in a significant phase transformation from NiSi2-rich to Si-rich silicide phases. © 2010 Elsevier B.V. All rights reserved.Article Citation - WoS: 10Citation - Scopus: 10Morphology, Order, Light Transmittance, and Water Vapor Permeability of Aluminum-Coated Polypropylene Zeolite Composite Films(John Wiley and Sons Inc., 2011) Balköse, Devrim; Oğuz, Kaan; Özyüzer, Lütfi; Tarı, Süleyman; Arkış, Esen; Özmıhçı Ömürlü, FilizIn this study, the polypropylene-zeolite composite films having 2-6 wt % natural zeolite were coated with a thin film of aluminum (Al) by magnetron sputtering, and the contribution of the Al coating on film properties was investigated. The samples were characterized by EDX, X-ray diffraction, SEM, AFM, UV-visible spectroscopy, and water vapor permeation analyses. The surface of the films coated with a smooth Al film having 98-131 nm thickness. EDX revealed that Al percentage on the surface appeared to be as 8-10 wt % indicating contribution of polymer surface under Al film to analysis. XRD analysis showed that the grain size of Al at the surface was 22-29 nm. The surface roughness increased after Al-coating process. The transmission of coated films was very low for both UV and visible regions of the light spectrum. Permeation analysis indicated that water vapor permeation was lower for Al-coated material.Master Thesis Structural and Magnetic Properties Os Si(100)/Ta Multilayers for Spintronics Applications(Izmir Institute of Technology, 2007) Vahaplar, Kadir; Tarı, SüleymanThis thesis is concerned with the structural and magnetic properties of Si(100)/Ta/Co single and multilayer thin films grown by DC magnetron sputtering technique. The structural properties of the films have been studied by X-Ray Diffractometer (XRD), Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). This study revealed that a single Co film grows amorphous on silicon substrate up to 50 nm at room temperature. After this thickness, Co starts crystallizing in hexagonal (002) plane. The same crystallinity was also observed for 25 nm amorphous Co which was annealed at 4500C at high vacuum for 30 minutes. The presence of a single crystalline tetragonal Ta phase (-Ta) with the orientation along (002) has been observed for 40 nm Ta growth on silicon substrate. The Si(100)/Ta/Co bilayers and multilayers show good crystallinity for both Ta and Co films. SEM and AFM results show that all the single and multilayers grew uniform, continuous and with very low surface roughness. The magnetic properties of the films were investigated using Vibrating Sample Magnetometer (VSM), by measuring hysteresis loops. The effects of the thickness and growth pressure on the magnetic properties of Co films were studied. The easy magnetization axis of the samples is found to be parallel to the Co film plane. As the Co film thickness increased from 4 nm to 15 nm, the coercivity (Hc) decreased from 72 G to 20 G and after a threshold thickness it increased almost linearly up to 180 G for 100 nm film while the magnetization decreased. Moreover, it has been observed that as the Co growth pressure increases, the Hc value of Co films increases. Finally, we obtained two different Hc values for our MTJ sandwich with the structure of Si(100)/Ta/Co/TaOx/Co/Ta.Article Citation - WoS: 24Citation - Scopus: 24The Effect of Back Electrode on the Formation of Electrodeposited Conife Magnetic Nanotubes and Nanowires(Elsevier, 2010) Atalay, Funda E.; Kaya, Harun; Yağmur, Vedat; Tarı, Süleyman; Atalay, Selçuk; Avşar, DuyguThe electrodeposition of cobalt + nickel + iron alloy nanostructures in aqueous sulfate solution has been studied using vitreous templates placed on highly ordered porous anodic alumina oxide (AAO). During the deposition process some electrochemical bath parameters such as ion content, deposition voltage, pH and temperature of solution were kept constant. The morphological properties of the nanostructures were studied by scanning electron microscopy (SEM) and the chemical composition was determined by examination of the energy dispersive X-ray (EDX) spectra. The magnetic behaviour of the arrays was determined with a vibrating sample magnetometer (VSM). Voltammetric and galvanostatic results indicate that the back electrodes placed on AAO plays the main role in obtaining nanowire or nanotube structured material. (C) 2009 Elsevier B. V. All rights reserved.Master Thesis Growth and Structural Characterization of Fe/Taox Magnetic Multilayers(Izmir Institute of Technology, 2006) Oğuz, Kaan; Tari, SüleymanIn this thesis, we are proposing to fabricate and structurally characterize Fe/TaOx/Fe magnetic multilayers as an initiative work towards magnetic tunnel junction (MTJ) structures with TaOx spacer layer. The multilayer structures were grown by magnetron sputtering technique and characterized by X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), and Scanning Electron Microscopy (SEM). Ellipsometry was used to find the refractive index and the hysteresis loops were taken by SQUID Magnetometer. It was found that Fe grew 45 degree tilted epitaxial single crystal on Si (001) substrate at room temperature. Ta growth on silicon had poor crystal quality due to large lattice mismatch between tantalum and silicon however Ta single layer on Fe was found to be single crystal with 0.72 FWHM. Reactive oxidation of Ta film resulted in formation of amorphous Ta2O5 with refractive index of 2.1. Fe, Ta, and TaOx single layer films were found to be uniform and smooth on silicon substrate. Bilayer of Fe/Ta and Fe/TaOx were also investigated to understand the behavior of single layer films on top of each other. Multilayers with Ta and TaOx spacer layers were successfully grown and these multilayers showed good structural properties. Furthermore, hysteresis loops of Fe films as thin as 50 nm showed magnetization comparable with the bulk Fe with the coercive field of 20 Oe.Article Effect of Ta Buffer Layer and Tao X Barrier Thickness on the Evolution of the Structural and Magnetic Properties of the Fe/Tao X /Co Trilayers(Springer Verlag, 2010) Tokuç, Hüseyin; Tarı, SüleymanFe/TaO x /Co trilayers were grown on Si(100)/SiO2 substrates and on tantalum buffer layers by a high vacuum magnetron sputtering system. The effects of both Ta buffer layer and tantalum-oxide barrier layer thickness on the structural and magnetic properties and the coupling of the ferromagnetic layers have been studied. It was observed that Ta improves the structural properties of the Fe layer resulting in an increased coercive field. For a barrier thickness of 4 nm a weak decoupling starts to appear between the ferromagnetic layers and a clear step formation is observed with increasing thickness. The minor hysteresis loops predict an interlayer coupling for thin barriers. The annealing of trilayers up to 250°C shows an increased coercivity for only the Fe layer. Annealing further at 400°C has the opposite effect of decreasing the coercivity, indicating intermixing at the interfaces of the Fe. The refractive index of the insulator barrier shows that the barrier layer is not totally in the form of tantalum-pentoxide. © 2009 Springer-Verlag.Master Thesis Investigation of Magnetic Dead Layer Formation at the Interfaces of Sputtered Ni80 Fe20 Thin Films(Izmir Institute of Technology, 2009) Alagöz, Hüseyin Serhat; Tarı, SüleymanIn this thesis, magnetic dead layer formation at the interfaces of the sputtered Ni80Fe20 thin films has been investigated experimentally. Different insulators such as Ta2O5, Al2O3 and metallic Ta thin films have been deposited as seed and cap layers to determine the MDL formation at the interface of Ni80Fe20. The magnetization of samples has been probed by Vibrating sample magnetometry and X-ray reflectivity measurements have been carried out to investigate the thickness and roughness of the interlayers. Ta films cause the most MDL formation when grown as seed as well as cap layer. It has been observed that the thickness of MDL is strongly temperature dependent. MDL thickness decreases for all trilayers deposited except for Ta2O5/Ni80Fe20/Ta2O5 when they are exposed to 300 .C annealing temperature. Further annealing at 500 .C causes an interdiffusion between the layers and the thickness of the MDL increases. According to XRR measurements, the thickness of the inter alloy layers between the Ni80Fe20 and its adjacent layers is consistent with the thickness of magnetic dead layer calculated from Liebermann equation. MDL calculations reveal that SiO2/Ta/Ni80Fe20/Al2O3 multilayer has the lowest MDL thickness therefore might be a possible candidate to be used in spin valve structures.Article Citation - WoS: 2Citation - Scopus: 2Scanning Probe Oxidation Lithography on Ta Thin Films(American Scientific Publishers, 2008) Okur, Salih; Büyükköse, Serkan; Tarı, SüleymanA Semi-Contact Scanning Probe Lithography Technique (SC-SPL) has been applied to create nano-oxide patterns on Ta thin films grown by DC magnetron sputtering method on SiO 2/Si substrates. The height and linewidth profiles of nano-oxide lines created by a conductive AFM tip on Ta film surfaces were measured as a function of applied voltage, oxidation time, humidity, and tip apex curvature. The AFM surface measurements show that the height of the oxides increases linearly with increasing voltage; but there was no oxide growth, when less than 4 V was applied even at 85% relative humidity. Electrical measurements were performed and the resistivities of the TaO x layer and Ta film were obtained as 5.76 × 10 8 and 1.4 × 10 5 Ohm-cm, respectively.Article Citation - WoS: 2Citation - Scopus: 2Znte/Gaas(2 1 1)b Heterojunction Valence Band Discontinuity Measured by X-Ray Photoelectron Spectroscopy(Elsevier Ltd., 2011) Wang, X. J.; Tarı, Süleyman; Sporken, R.; Sivananthan, S.Thin ZnTe layers were grown by molecular beam epitaxy on single crystal GaAs(2 1 1)B substrates. Reflection high energy electron diffraction monitored the deoxidation of substrate and entire growth process. Valence band offset was calculated with X-ray photoelectron spectroscopy. Also interface formation of the ZnTe/GaAs was studied. Analysis shows that interface is abrupt and calculated valance band offset is 0.25±0.1 eV and indicates type I alignment. The experimental result agrees well with the theoretical predictions involving interface dipole effect as well as electron affinity rule.