Conductance Fluctuations in Vhf-Pecvd Grown Hydrogenated Microcrystalline Silicon Thin Films

dc.contributor.author Güneş, Mehmet
dc.contributor.author Johanson, Robert E.
dc.contributor.author Kasap, Safa O.
dc.contributor.author Finger, Friedhelm
dc.contributor.author Lambertz, Andreas
dc.coverage.doi 10.1023/A:1026199608881
dc.date.accessioned 2016-05-27T12:25:55Z
dc.date.available 2016-05-27T12:25:55Z
dc.date.issued 2003
dc.description.abstract Coplanar conductance fluctuations or excess noise of undoped hydrogenated microcrystal-line silicon (μc-Si : H) thin films grown by VHF-PECVD from silane-hydrogen mixtures with silane concentrations from 2% to 6% have been studied between room temperature and 470 K. We report that undoped μc-Si : H thin films show similar noise-power spectra to those of undoped a-Si : H films in a coplanar sample geometry. At lower temperatures, the noise with the slope α = 0.60 ± 0.07 and at higher temperatures, the noise with the slope α close to unity dominate the spectrum. The noise magnitude decreases with decreasing silane concentration and becomes strongly temperature dependent with increased crystal unity. en_US
dc.description.sponsorship TÜBİTAK and NSECR en_US
dc.identifier.citation Güneş, M., Johanson, R. E., Kasap, S. O., Finger, F., and Lambertz, A. (2003). Conductance fluctuations in VHF-PECVD grown hydrogenated microcrystalline silicon thin films. Journal of Materials Science: Materials in Electronics, 14(10-12), 731-732. doi:10.1023/A:1026199608881 en_US
dc.identifier.doi 10.1023/A:1026199608881 en_US
dc.identifier.doi 10.1023/A:1026199608881
dc.identifier.issn 0957-4522
dc.identifier.issn 0957-4522
dc.identifier.scopus 2-s2.0-0242285610
dc.identifier.uri http://doi.org/10.1023/A:1026199608881
dc.identifier.uri https://hdl.handle.net/11147/4674
dc.language.iso en en_US
dc.publisher Springer Verlag en_US
dc.relation.ispartof Journal of Materials Science: Materials in Electronics en_US
dc.rights info:eu-repo/semantics/openAccess en_US
dc.subject Thin films en_US
dc.subject Coplanar conductance en_US
dc.subject Crystalline materials en_US
dc.subject Hydrogenation en_US
dc.subject Plasma enhanced chemical vapor deposition en_US
dc.subject Silicon en_US
dc.title Conductance Fluctuations in Vhf-Pecvd Grown Hydrogenated Microcrystalline Silicon Thin Films en_US
dc.type Conference Object en_US
dspace.entity.type Publication
gdc.author.institutional Güneş, Mehmet
gdc.bip.impulseclass C5
gdc.bip.influenceclass C5
gdc.bip.popularityclass C5
gdc.coar.access open access
gdc.coar.type text::conference output
gdc.collaboration.industrial false
gdc.description.department İzmir Institute of Technology. Physics en_US
gdc.description.endpage 732 en_US
gdc.description.issue 10-12 en_US
gdc.description.publicationcategory Konferans Öğesi - Uluslararası - Kurum Öğretim Elemanı en_US
gdc.description.scopusquality Q2
gdc.description.startpage 731 en_US
gdc.description.volume 14 en_US
gdc.description.wosquality Q2
gdc.identifier.openalex W191644692
gdc.identifier.wos WOS:000185962400031
gdc.index.type WoS
gdc.index.type Scopus
gdc.oaire.diamondjournal false
gdc.oaire.impulse 0.0
gdc.oaire.influence 2.635068E-9
gdc.oaire.isgreen true
gdc.oaire.keywords Plasma enhanced chemical vapor deposition
gdc.oaire.keywords Silicon
gdc.oaire.keywords Thin films
gdc.oaire.keywords Coplanar conductance
gdc.oaire.keywords Crystalline materials
gdc.oaire.keywords Hydrogenation
gdc.oaire.popularity 3.0782712E-10
gdc.oaire.publicfunded false
gdc.openalex.collaboration International
gdc.openalex.fwci 0.0
gdc.openalex.normalizedpercentile 0.01
gdc.opencitations.count 1
gdc.plumx.crossrefcites 1
gdc.plumx.mendeley 10
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local.message.claim |dc_contributor_author *
local.message.claim |None *
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