Conductance Fluctuations in Vhf-Pecvd Grown Hydrogenated Microcrystalline Silicon Thin Films
| dc.contributor.author | Güneş, Mehmet | |
| dc.contributor.author | Johanson, Robert E. | |
| dc.contributor.author | Kasap, Safa O. | |
| dc.contributor.author | Finger, Friedhelm | |
| dc.contributor.author | Lambertz, Andreas | |
| dc.coverage.doi | 10.1023/A:1026199608881 | |
| dc.date.accessioned | 2016-05-27T12:25:55Z | |
| dc.date.available | 2016-05-27T12:25:55Z | |
| dc.date.issued | 2003 | |
| dc.description.abstract | Coplanar conductance fluctuations or excess noise of undoped hydrogenated microcrystal-line silicon (μc-Si : H) thin films grown by VHF-PECVD from silane-hydrogen mixtures with silane concentrations from 2% to 6% have been studied between room temperature and 470 K. We report that undoped μc-Si : H thin films show similar noise-power spectra to those of undoped a-Si : H films in a coplanar sample geometry. At lower temperatures, the noise with the slope α = 0.60 ± 0.07 and at higher temperatures, the noise with the slope α close to unity dominate the spectrum. The noise magnitude decreases with decreasing silane concentration and becomes strongly temperature dependent with increased crystal unity. | en_US |
| dc.description.sponsorship | TÜBİTAK and NSECR | en_US |
| dc.identifier.citation | Güneş, M., Johanson, R. E., Kasap, S. O., Finger, F., and Lambertz, A. (2003). Conductance fluctuations in VHF-PECVD grown hydrogenated microcrystalline silicon thin films. Journal of Materials Science: Materials in Electronics, 14(10-12), 731-732. doi:10.1023/A:1026199608881 | en_US |
| dc.identifier.doi | 10.1023/A:1026199608881 | en_US |
| dc.identifier.doi | 10.1023/A:1026199608881 | |
| dc.identifier.issn | 0957-4522 | |
| dc.identifier.issn | 0957-4522 | |
| dc.identifier.scopus | 2-s2.0-0242285610 | |
| dc.identifier.uri | http://doi.org/10.1023/A:1026199608881 | |
| dc.identifier.uri | https://hdl.handle.net/11147/4674 | |
| dc.language.iso | en | en_US |
| dc.publisher | Springer Verlag | en_US |
| dc.relation.ispartof | Journal of Materials Science: Materials in Electronics | en_US |
| dc.rights | info:eu-repo/semantics/openAccess | en_US |
| dc.subject | Thin films | en_US |
| dc.subject | Coplanar conductance | en_US |
| dc.subject | Crystalline materials | en_US |
| dc.subject | Hydrogenation | en_US |
| dc.subject | Plasma enhanced chemical vapor deposition | en_US |
| dc.subject | Silicon | en_US |
| dc.title | Conductance Fluctuations in Vhf-Pecvd Grown Hydrogenated Microcrystalline Silicon Thin Films | en_US |
| dc.type | Conference Object | en_US |
| dspace.entity.type | Publication | |
| gdc.author.institutional | Güneş, Mehmet | |
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| gdc.description.department | İzmir Institute of Technology. Physics | en_US |
| gdc.description.endpage | 732 | en_US |
| gdc.description.issue | 10-12 | en_US |
| gdc.description.publicationcategory | Konferans Öğesi - Uluslararası - Kurum Öğretim Elemanı | en_US |
| gdc.description.scopusquality | Q2 | |
| gdc.description.startpage | 731 | en_US |
| gdc.description.volume | 14 | en_US |
| gdc.description.wosquality | Q2 | |
| gdc.identifier.openalex | W191644692 | |
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| gdc.oaire.keywords | Plasma enhanced chemical vapor deposition | |
| gdc.oaire.keywords | Silicon | |
| gdc.oaire.keywords | Thin films | |
| gdc.oaire.keywords | Coplanar conductance | |
| gdc.oaire.keywords | Crystalline materials | |
| gdc.oaire.keywords | Hydrogenation | |
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