1/F Noise in Hydrogenated Amorphous Silicon-Germanium Alloys

dc.contributor.author Johanson, Robert E.
dc.contributor.author Güneş, Mehmet
dc.contributor.author Kasap, Safa O.
dc.coverage.doi 10.1049/ip-cds:20030749
dc.date.accessioned 2016-05-30T10:44:01Z
dc.date.available 2016-05-30T10:44:01Z
dc.date.issued 2003
dc.description.abstract Measurements were made of conductance noise of a-Si:H and a-Si 1-xGex:H in two different geometries: one where the current flow is transverse to the surface and the other where it is longitudinal to the surface. Because of the large change in sample resistance between the two geometries, it was not possible to measure both geometries at the same temperature. For both geometries, alloyinzg with up to 40% Ge reduces the noise magnitude by several orders of magnitude over that found in a-Si:H. The decrease is incompatible with several popular noise models. Extrapolating the temperature trends for each geometry shows that it is possible that the noise observed in the transverse samples has the same origin as the higher frequency part of the double power law spectra observed in the longitudinal samples. en_US
dc.description.sponsorship Natural Sciences and Engineering Research Council of Canada en_US
dc.identifier.citation Johanson, R. E., Güneş, M., and Kasap, S. O. (2003). 1/f noise in hydrogenated amorphous silicon-germanium alloys. IEE Proceedings: Circuits, Devices and Systems, 150(4), 345-349. doi:10.1049/ip-cds:20030749 en_US
dc.identifier.doi 10.1049/ip-cds:20030749 en_US
dc.identifier.doi 10.1049/ip-cds:20030749
dc.identifier.issn 1350-2409
dc.identifier.scopus 2-s2.0-0142167954
dc.identifier.uri http://doi.org/10.1049/ip-cds:20030749
dc.identifier.uri https://hdl.handle.net/11147/4681
dc.language.iso en en_US
dc.publisher Institute of Electrical and Electronics Engineers en_US
dc.relation.ispartof IEE Proceedings: Circuits, Devices and Systems en_US
dc.rights info:eu-repo/semantics/openAccess en_US
dc.subject Amorphous silicon en_US
dc.subject Coplanar electrodes en_US
dc.subject Hydrogenation en_US
dc.subject Semiconducting germanium en_US
dc.subject Silanes en_US
dc.subject Spurious signal noise en_US
dc.title 1/F Noise in Hydrogenated Amorphous Silicon-Germanium Alloys en_US
dc.type Conference Object en_US
dspace.entity.type Publication
gdc.author.institutional Güneş, Mehmet
gdc.bip.impulseclass C5
gdc.bip.influenceclass C4
gdc.bip.popularityclass C5
gdc.coar.access open access
gdc.coar.type text::conference output
gdc.collaboration.industrial false
gdc.description.department İzmir Institute of Technology. Physics en_US
gdc.description.endpage 349 en_US
gdc.description.issue 4 en_US
gdc.description.publicationcategory Konferans Öğesi - Uluslararası - Kurum Öğretim Elemanı en_US
gdc.description.scopusquality N/A
gdc.description.startpage 345 en_US
gdc.description.volume 150 en_US
gdc.identifier.openalex W2067627024
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gdc.oaire.influence 3.5871452E-9
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gdc.oaire.keywords Amorphous silicon
gdc.oaire.keywords Coplanar electrodes
gdc.oaire.keywords Hydrogenation
gdc.oaire.keywords Silanes
gdc.oaire.keywords Semiconducting germanium
gdc.oaire.keywords Spurious signal noise
gdc.oaire.popularity 2.327381E-9
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gdc.oaire.sciencefields 0103 physical sciences
gdc.oaire.sciencefields 02 engineering and technology
gdc.oaire.sciencefields 0210 nano-technology
gdc.oaire.sciencefields 01 natural sciences
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gdc.opencitations.count 8
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