Electrical Characterizations of Schottky Diodes on Ito Modified by Aromatic Sams

dc.contributor.author Havare, A. Kemal
dc.contributor.author Okur, Salih
dc.contributor.author Yağmurcukardeş, Nesli
dc.contributor.author Can, M.
dc.contributor.author Aydın, H.
dc.contributor.author Şeker, M.
dc.contributor.author Demiç, Şerafettin
dc.coverage.doi 10.12693/APhysPolA.123.456
dc.date.accessioned 2017-04-17T06:49:53Z
dc.date.available 2017-04-17T06:49:53Z
dc.date.issued 2013
dc.description.abstract In order to understand the electronic properties of the organic Schottky diode, ITO/TPD/Al and ITO/SAM/ TPD/Al organic Schottky devices were fabricated to obtain currentffvoltage characteristics. From the slopes and y-axis intercepts of the plots, the values of the ideality factor, barrier heights of the ITO/SAM/TPD/Al diode were determined as 2.03 and 0.56 eV, respectively. The surface characterizations of modified and unmodified ITO were performed via atomic force microscopy. en_US
dc.description.sponsorship TUBITAK under grant No. TBAG-108T718 en_US
dc.identifier.citation Havare, A. K., Okur, S., Yağmurcukardeş, N., Can, M., Aydın, H., Şeker, M., and Demiç, Ş. (2013). Electrical characterizations of schottky diodes on ITO Modified by Aromatic SAMs. Acta Physica Polonica A, 123(2), 456-458. doi:10.12693/APhysPolA.123.456 en_US
dc.identifier.doi 10.12693/APhysPolA.123.456 en_US
dc.identifier.doi 10.12693/APhysPolA.123.456
dc.identifier.issn 0587-4246
dc.identifier.issn 1898-794X
dc.identifier.scopus 2-s2.0-84874068971
dc.identifier.uri http://doi.org/10.12693/APhysPolA.123.456
dc.identifier.uri https://hdl.handle.net/11147/5317
dc.language.iso en en_US
dc.publisher Polish Academy of Sciences en_US
dc.relation info:eu-repo/grantAgreement/TUBITAK/TBAG/108T718 en_US
dc.relation.ispartof Acta Physica Polonica A en_US
dc.rights info:eu-repo/semantics/openAccess en_US
dc.subject Characterization en_US
dc.subject Atomic force microscopy en_US
dc.subject Schottky barrier diodes en_US
dc.subject Ideality factors en_US
dc.title Electrical Characterizations of Schottky Diodes on Ito Modified by Aromatic Sams en_US
dc.type Article en_US
dspace.entity.type Publication
gdc.author.institutional Yağmurcukardeş, Nesli
gdc.author.institutional Aydın, H.
gdc.author.institutional Okur, Salih
gdc.bip.impulseclass C5
gdc.bip.influenceclass C5
gdc.bip.popularityclass C5
gdc.coar.access open access
gdc.coar.type text::journal::journal article
gdc.collaboration.industrial false
gdc.description.department İzmir Institute of Technology. Materials Science and Engineering en_US
gdc.description.endpage 458 en_US
gdc.description.issue 2 en_US
gdc.description.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
gdc.description.scopusquality Q3
gdc.description.startpage 456 en_US
gdc.description.volume 123 en_US
gdc.description.wosquality Q4
gdc.identifier.openalex W1969561122
gdc.identifier.wos WOS:000317541600099
gdc.index.type WoS
gdc.index.type Scopus
gdc.oaire.accesstype GOLD
gdc.oaire.diamondjournal false
gdc.oaire.downloads 0
gdc.oaire.impulse 2.0
gdc.oaire.influence 2.7409728E-9
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gdc.oaire.keywords Atomic force microscopy
gdc.oaire.keywords Characterization
gdc.oaire.keywords Schottky barrier diodes
gdc.oaire.keywords Ideality factors
gdc.oaire.popularity 1.6412255E-9
gdc.oaire.publicfunded false
gdc.oaire.sciencefields 02 engineering and technology
gdc.oaire.sciencefields 0210 nano-technology
gdc.oaire.sciencefields 01 natural sciences
gdc.oaire.sciencefields 0104 chemical sciences
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gdc.openalex.collaboration National
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gdc.openalex.normalizedpercentile 0.65
gdc.opencitations.count 3
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gdc.scopus.citedcount 4
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