Znte/Gaas(2 1 1)b Heterojunction Valence Band Discontinuity Measured by X-Ray Photoelectron Spectroscopy
| dc.contributor.author | Wang, X. J. | |
| dc.contributor.author | Tarı, Süleyman | |
| dc.contributor.author | Sporken, R. | |
| dc.contributor.author | Sivananthan, S. | |
| dc.coverage.doi | 10.1016/j.apsusc.2010.11.019 | |
| dc.date.accessioned | 2017-01-18T07:14:25Z | |
| dc.date.available | 2017-01-18T07:14:25Z | |
| dc.date.issued | 2011 | |
| dc.description.abstract | Thin ZnTe layers were grown by molecular beam epitaxy on single crystal GaAs(2 1 1)B substrates. Reflection high energy electron diffraction monitored the deoxidation of substrate and entire growth process. Valence band offset was calculated with X-ray photoelectron spectroscopy. Also interface formation of the ZnTe/GaAs was studied. Analysis shows that interface is abrupt and calculated valance band offset is 0.25±0.1 eV and indicates type I alignment. The experimental result agrees well with the theoretical predictions involving interface dipole effect as well as electron affinity rule. | en_US |
| dc.description.sponsorship | EPIR Technologies Inc, CEO Dr. Sivalingam Sivananthan, under contract No. IRD-06-UIC0001 | en_US |
| dc.identifier.citation | Wang, X. J., Tarı, S., Sporken, R., and Sivananthan, S. (2011). ZnTe/GaAs(2 1 1)B heterojunction valence band discontinuity measured by X-ray photoelectron spectroscopy. Applied Surface Science, 257 (8), 3346-3349. doi:10.1016/j.apsusc.2010.11.019 | en_US |
| dc.identifier.doi | 10.1016/j.apsusc.2010.11.019 | |
| dc.identifier.doi | 10.1016/j.apsusc.2010.11.019 | en_US |
| dc.identifier.issn | 0169-4332 | |
| dc.identifier.issn | 1873-5584 | |
| dc.identifier.issn | 0169-4332 | |
| dc.identifier.scopus | 2-s2.0-78651347250 | |
| dc.identifier.uri | http://doi.org/10.1016/j.apsusc.2010.11.019 | |
| dc.identifier.uri | https://hdl.handle.net/11147/2807 | |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier Ltd. | en_US |
| dc.relation.ispartof | Applied Surface Science | en_US |
| dc.rights | info:eu-repo/semantics/openAccess | en_US |
| dc.subject | Valence band offset | en_US |
| dc.subject | XPS | en_US |
| dc.subject | Strain | en_US |
| dc.subject | Intermixing | en_US |
| dc.subject | Epitaxy | en_US |
| dc.title | Znte/Gaas(2 1 1)b Heterojunction Valence Band Discontinuity Measured by X-Ray Photoelectron Spectroscopy | en_US |
| dc.type | Article | en_US |
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| gdc.author.institutional | Tarı, Süleyman | |
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| gdc.description.department | İzmir Institute of Technology. Physics | en_US |
| gdc.description.endpage | 3349 | en_US |
| gdc.description.issue | 8 | en_US |
| gdc.description.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
| gdc.description.scopusquality | Q1 | |
| gdc.description.startpage | 3346 | en_US |
| gdc.description.volume | 257 | en_US |
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| gdc.oaire.keywords | Valence band offset | |
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