Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Article Citation - WoS: 3Citation - Scopus: 3Stable Single Layer Structures of Aluminum Oxide: Vibrational and Electronic Characterization of Magnetic Phases(Elsevier, 2022) Özyurt, A. Kutay; Molavali, Deniz; Şahin, HasanThe structural, magnetic, vibrational and electronic properties of single layer aluminum oxide (AlO2) are investigated by performing state-of-the-art first-principles calculations. Total energy optimization and phonon calculations reveal that aluminum oxide forms a distorted octahedral structure (1T′-AlO2) in its single layer limit. It is also shown that surfaces of 1T′-AlO2 display magnetic behavior originating from the O atoms. While the ferromagnetic (FM) state is the most favorable magnetic order for 1T′-AlO2, transformation to a dynamically stable antiferromagnetic (AFM) state upon a slight distortion in the crystal structure is also possible. It is also shown that Raman activities (350–400 cm−1) obtained from the vibrational spectrum can be utilized to distinguish the possible magnetic phases of the crystal structure. Electronically, both FM and the AFM phases are semiconductors with an indirect band gap and they can form a type-III vdW heterojunction with graphene-like ultra-thin materials. Moreover, it is predicted that presence of oxygen defects that inevitably occur during synthesis and production do not alter the magnetic state, even at high vacancy density. Apparently, ultra-thin 1T′-AlO2 with its stable crystal structure, semiconducting nature and robust magnetic state is a quite promising material for nanoscale device applications.Article Citation - WoS: 4Citation - Scopus: 4Development of Single-Use Thin Film Electrodes Based on Zn2sno4 on In2o3:sno2 Substrates With Their Biosensing Applications(Elsevier, 2022) Yurttaş, Betül; Maral, Meltem; Erdem, Arzu; Özyüzer, LütfiDopamine (DA) has a significant impact on the emergence and treatment of certain diseases (e.g., Alzheimer's and Parkinson's diseases). Therefore, monitoring of DA is important, and using biosensors is a favorable option instead of time-consuming and expensive conventional methods. In biosensor manufacturing, thin films have become a rapidly emerging field. In this study, a non-enzymatic electrochemical biosensor based on thin film electrodes is developed for monitoring DA levels. The thin film electrodes (ZTO/ITO) are developed by deposition of Zn2SnO4 (ZTO) on In2O3:SnO2 (ITO) substrates by magnetron sputtering. 3-aminopropyltriethoxysilane (APTES) is used to modify the surface of these electrodes. Physical, optical, and structural properties of the electrodes are determined by applying surface profilometry, UV–VIS–NIR spectrophotometry, X-ray diffraction (XRD), and scanning electron microscopy (SEM) measurements. According to these measurements, it has been observed that the ZTO/ITO combination has a higher optical transmission value than the bare ITO, depending on the deposition time and the oxygen concentration used during ZTO deposition. In addition, the ITO thin film has a crystalline structure, while the ZTO thin film has an amorphous structure and both thin films have a good surface morphology. As electrochemical analysis, cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and differential pulse voltammetry (DPV) measurements are performed. As a result of CV and EIS measurements, a remarkable change (63.54%) was observed after applying APTES modification onto the surface of ZTO/ITO electrode, and the ones obtained by DPV showed successful detection of DA by APTES modified ZTO/ITO. In addition, the experiments in the presence of interferences such as ascorbic acid (AA), uric acid (UA), bovine serum albumin (BSA), and fish sperm double-stranded DNA (fsDNA) show that the electrodes can be successfully applied for voltammetric determination of DA. The detection limit of DA was estimated to be 0.013 µM in the range of DA between 0.1 and 1 µM, and sensitivity was calculated and found to be 11.057 μA μg−1 mL cm−2, which means ZTO/ITO electrodes have a good sensitivity.Article Citation - WoS: 4Citation - Scopus: 4Indirect Exchange Interaction in Two-Dimensional Materials With Quartic Dispersion(American Physical Society, 2022) Canbolat, Ahmet Utku; Sevinçli, Haldun; Çakır, ÖzgürWe investigate the indirect magnetic exchange interaction between two magnetic moments in a two-dimensional semiconductor with quartic dispersion, featuring a singularity at the band edge. We obtain the Green's functions analytically to calculate the magnetic exchange interaction at zero temperature. We show that the singularity in the density of states (DOS) for quartic dispersion gives rise to an enhancement in the amplitude of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction as the Fermi energy is swept toward the band edge. Furthermore, a region of finite exchange interaction arises, with a range increasing as the Fermi energy approaches the band edge. The results lay the possibility of an electrical/chemical control over the exchange interactions.Article Citation - WoS: 4Citation - Scopus: 4Light-Induced Modification of the Schottky Barrier Height in Graphene/Si Based Near-Infrared Photodiodes(Elsevier, 2022) Fidan, Mehmet; Dönmez, Gülçin; Yanılmaz, Alper; Ünverdi, Özhan; Çelebi, CemThe impact of light on the Schottky barrier height (SBH) in p-type graphene/n-type Si (p-Gr/n-Si) based near-infrared photodiodes is investigated. Hall effect and optoelectronic transport measurements carried out under illumination of 905 nm wavelength light showed that zero-bias SBH in such photodiodes can be effectively tuned in a range between 0.7 and 0.9 eV consistent with the variation in their open-circuit voltage. Shockley-Read-Hall model, which considers the charge recombination through mid-gap and interface states at the p-Gr/n-Si heterojunction, is used to explain the experimentally observed nonlinear dependence of SBH on the incident light. Light induced tunability of SBH at the graphene/semiconductor heterojunction is of great importance especially for the development of new generation optically driven devices in which graphene acts as a functioning element.Article Citation - WoS: 4Citation - Scopus: 4Atomic Collapse in Graphene Quantum Dots in a Magnetic Field(Elsevier, 2022) Eren, İsmail; Güçlü, Alev DevrimWe investigate finite size and external magnetic field effects on the atomic collapse due to a Coulomb impurity placed at the center of a hexagonal graphene quantum dot within tight binding and mean-field Hubbard approaches. For large quantum dots, the atomic collapse effect persists when the magnetic field is present, characterized by a series of Landau level crossings and anticrossings, in agreement with previous bulk graphene results. However, we show that a new regime arises if the size of the quantum dot is comparable to or smaller than the magnetic length: While the lowest bound states cross the Fermi level at a lower value of coupling constant β<0.5, a size independent critical coupling constant βc∗>0.5 emerges in the local density of states spectrum, which increases with the applied magnetic field. These effects are found to be persistent in the presence of electron–electron interactions within mean-field Hubbard approximation.