Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
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Article Citation - WoS: 59Citation - Scopus: 59Interfacial and Structural Properties of Sputtered Hfo2 Layers(American Institute of Physics, 2009) Özyüzer, Gülnur Aygün; Yıldız, İlkerMagnetron sputtered HfO2 layers formed on a heated Si substrate were studied by spectroscopic ellipsometer (SE), x-ray diffraction (XRD), Fourier transform infrared (FTIR), and x-ray photoelectron spectroscopy (XPS) depth profiling techniques. The results show that the formation of a SiO x suboxide layer at the HfO2 /Si interface is unavoidable. The HfO2 thickness and suboxide formation are highly affected by the growth parameters such as sputtering power, O2 /Ar gas ratio during sputtering, sputtering time, and substrate temperature. XRD spectra show that the deposited film has (111) monoclinic phase of HfO2, which is also supported by FTIR spectra. The atomic concentration and chemical environment of Si, Hf, and O have been measured as a function of depth starting from the surface of the sample by XPS technique. It shows that HfO2 layers of a few nanometers are formed at the top surface. Below this thin layer, Si-Si bonds are detected just before the Si suboxide layer, and then the Si substrate is reached during the depth profiling by XPS. It is clearly understood that the highly reactive sputtered Hf atoms consume some of the oxygen atoms from the underlying SiO2 to form HfO2, leaving Si-Si bonds behind.Conference Object Phenomenological Aspects of U(1)' Models(American Institute of Physics, 2009) Demir, Durmuş AliThis talk summarizes certain phenomenological aspects of the supersymmetric models with an extra U(1) invariance broken at the TeV scale. The discussions involve the Higgs sector, CP violation, Neutrino masses and the LHC signatures.Conference Object Signatures of Doubly-Charged Higgsinos at Colliders(American Institute of Physics, 2008) Demir, Durmuş Ali; Frank, Mariana; Huitu, Katri; Rai, Santosh Kumar; Turan, İsmailSeveral supersymmetric models with extended gauge structures predict light doubly-charged Higgsinos. Their distinctive signature at the large hadron collider is highlighted by studying its production and decay characteristics.Conference Object Citation - WoS: 1Dependence of Josephson Junction Critical Current on the Deposition Rate of Yba2cu3o7-? Thin Films(American Institute of Physics, 2007) Algül, B. P.; Avcı, İlbeyi; Akram, R.; Bozbey, Ali; Tepe, Mustafa; Abukay, DoğanWe have reported the effect of YBa2Cu3O 7-δ (YBCO) thin film deposition rate on the 24 and 30 degree STO bicrystal Josephson junctions critical currents by fabricating series of junctions with different deposition rates. Dependence of YBCO thin film structures on the deposition rate was investigated. We have observed that the critical currents of junctions are strongly affected by the thin film deposition rate.Conference Object Growth and Characterization of Carbon Nanostructures(American Institute of Physics, 2007) Selamet, Yusuf; Yüce, GörkemCarbon nanostructures were grown by arc-discharge method and characterized by SEM, AFM, STM, and XRD techniques. We observe broadening in the radial distribution of nanofibers grown with Co and Ni application. The nanofibers grown with Co/Ni application were straighter and shorter in length than nanofibers without Co/Ni application. This might be due to catalyst particle poisoning resulting in termination of the growth process earlier than expected.Article Citation - WoS: 1Citation - Scopus: 1Modification of Al-Oxide Tunnel Barriers With Organic Self-Assembled Monolayers(American Institute of Physics, 1999) Okur, Salih; Zasadzinski, John F.Al-oxide tunneling barriers were modified by exposure to a vapor of n-octadecyltrimethoxysilane which forms self-assembled monolayers. The dynamic conductance dI/dV of the modified Al-oxide barrier between Al and Pb electrodes was measured at 4.2 K. Quasilinear conductance backgrounds are observed up to 200 mV with a strength that increases with increasing exposure time from 10 to 60 min. A saturation effect is observed around 200 mV. Beyond 200 mV the dynamic conductance shows a parabolic behavior indicative of elastic tunneling from an asymmetric barrier. The linear background is attributed to inelastic tunneling from a continuum of excitationsArticle Citation - WoS: 37Citation - Scopus: 41Differences in the Densities of Charged Defect States and Kinetics of Staebler-Wronski Effect in Undoped (nonintrinsic) Hydrogenated Amorphous Silicon Thin Films(American Institute of Physics, 1997) Güneş, Mehmet; Wronski, Christopher R.A variety of undoped (nonintrinsic) hydrogenated amorphous silicon (a-Si:H) thin films was studied in greater detail using steady-state photoconductivity, σph, subband-gap absorption, α(hν), steady-state photocarrier grating (SSPG), and electron-spin-resonance (ESR) techniques both in the annealed and stabilized light soaked states. The experimental results were self-consisiently modeled using a detailed numerical analysis. It was found that large differences in the optoelectronic properties of device quality a-Si:H thin films can only be explained using a gap slate distribution which consists of positively charged D+ defect states above the Fermi level, the neutral D0 defect states, and the negatively charged D- defect states below the Fermi level. There are large differences both in the densities of neutral and charged defect states and R ratios in different a-Si:H films in the annealed state. The densities of both neutral and charged defect states increased, however, R ratios decreased in the stabilized light soaked state. Very good agreement was obtained between the densities of neutral defect states measured by ESR and those derived from the numerical analysis in the stabilized light soaked state. The kinetics of the Staebler-Wronski effect was also investigated. There was no direct correlation between the decrease of steady-state photoconductivity and increase of subband-gap absorption. The self-consistent fits to wide range of experimental results obtained with the three Gaussian distributions of charged defect states imply that this model is much better representation of the bulk defect states in undoped hydrogenated amorphous silicon thin films.