Physics / Fizik
Permanent URI for this collectionhttps://hdl.handle.net/11147/6
Browse
13 results
Search Results
Article Citation - WoS: 9Citation - Scopus: 8Chlorinated Phosphorene for Energy Application(Elsevier, 2024) Hassani, Nasim; Yağmurcukardeş, Mehmet; Peeters, Francois M.; Neek-Amal, MehdiThe influence of decoration with impurities and the composition dependent band gap in 2D materials has been the subject of debate for a long time. Here, by using Density Functional Theory (DFT) calculations, we systematically disclose physical properties of chlorinated phosphorene having the stoichiometry of PmCln. By analyzing the adsorption energy, charge density, migration energy barrier, structural, vibrational, and electronic properties of chlorinated phosphorene, we found that (I) the Cl-P bonds are strong with binding energy Eb =-1.61 eV, decreases with increasing n. (II) Cl atoms on phosphorene have anionic feature, (III) the migration path of Cl on phosphorene is anisotropic with an energy barrier of 0.38 eV, (IV) the phonon band dispersion reveal that chlorinated phosphorenes are stable when r <= 0.25 where r = m/n, (V) chlorinated phosphorenes is found to be a photonic crystal in the frequency range of 280 cm-1 to 325 cm-1, (VI) electronic band structure of chlorinated phosphorenes exhibits quasi-flat bands emerging around the Fermi level with widths in the range of 22 meV to 580 meV, and (VII) Cl adsorption causes a semiconducting to metallic/semi-metallic transition which makes it suitable for application as an electroactive material. To elucidate this application, we investigated the change in binding energy (Eb), specific capacity, and open-circuit voltage as a function of the density of adsorbed Cl. The theoretical storage capacity of the chlorinated phosphorene is found to be 168.19 mA h g-1with a large average voltage (similar to 2.08 V) which is ideal number as a cathode in chloride-ion batteries.Article Citation - WoS: 1Citation - Scopus: 1Hdac9/P300 Immunoexpression and Migration Analysis for Malignant Melanoma Stem Cell(Elsevier, 2023) Özdil, Berrin; Asker Abdikan, Cemile Sinem; Özdemir, Merve; Erişik, Derya; Yesin, Taha Kadir; Avcı, Çığır Biray; Kurkutçu, Yeşim; Güler, Günnur; Aktuğ, HüseyinMelanoma is an aggressive tumor with a poor prognosis that worsens in the metastatic phase. Distruptions of epigenetic mechanisms is known to effect cancer stem cells (CSCs) activity. Malignant melanoma (MM) progression may be promoted by changes in the genetic structure of CSC. Thus, treatments that target epigenetic modifications could be a promising weapon, especially in melanoma. Here, we compared p300, HDAC9, and Factin proteins in melanoma CSCs (CD133+), non-CSCs (CD133-) and CHL-1 cell line, as well as cell migration and division rates. At 4 and 6 h, P300 protein levels in CHL-1 and CD133 + were remarkably similar, and the CD133- showed increases in expression levels as the incubation period lengthened. HDAC9 protein intensity decreased in CHL-1, increased in the CD133-, and remained relatively unchanged in the CD133+ as the incubation period lengthened. The mean value of F-actin expression level increased in all cell group with time, when the highest increase observed in CHL-1. In conclusion, our studies contribute to the management of metastatic diseases in the future and offer new insight into the molecular basis of the initiation and progression of MM.Article Citation - WoS: 3Citation - Scopus: 3Stable Single Layer Structures of Aluminum Oxide: Vibrational and Electronic Characterization of Magnetic Phases(Elsevier, 2022) Özyurt, A. Kutay; Molavali, Deniz; Şahin, HasanThe structural, magnetic, vibrational and electronic properties of single layer aluminum oxide (AlO2) are investigated by performing state-of-the-art first-principles calculations. Total energy optimization and phonon calculations reveal that aluminum oxide forms a distorted octahedral structure (1T′-AlO2) in its single layer limit. It is also shown that surfaces of 1T′-AlO2 display magnetic behavior originating from the O atoms. While the ferromagnetic (FM) state is the most favorable magnetic order for 1T′-AlO2, transformation to a dynamically stable antiferromagnetic (AFM) state upon a slight distortion in the crystal structure is also possible. It is also shown that Raman activities (350–400 cm−1) obtained from the vibrational spectrum can be utilized to distinguish the possible magnetic phases of the crystal structure. Electronically, both FM and the AFM phases are semiconductors with an indirect band gap and they can form a type-III vdW heterojunction with graphene-like ultra-thin materials. Moreover, it is predicted that presence of oxygen defects that inevitably occur during synthesis and production do not alter the magnetic state, even at high vacancy density. Apparently, ultra-thin 1T′-AlO2 with its stable crystal structure, semiconducting nature and robust magnetic state is a quite promising material for nanoscale device applications.Article Citation - WoS: 4Citation - Scopus: 4Development of Single-Use Thin Film Electrodes Based on Zn2sno4 on In2o3:sno2 Substrates With Their Biosensing Applications(Elsevier, 2022) Yurttaş, Betül; Maral, Meltem; Erdem, Arzu; Özyüzer, LütfiDopamine (DA) has a significant impact on the emergence and treatment of certain diseases (e.g., Alzheimer's and Parkinson's diseases). Therefore, monitoring of DA is important, and using biosensors is a favorable option instead of time-consuming and expensive conventional methods. In biosensor manufacturing, thin films have become a rapidly emerging field. In this study, a non-enzymatic electrochemical biosensor based on thin film electrodes is developed for monitoring DA levels. The thin film electrodes (ZTO/ITO) are developed by deposition of Zn2SnO4 (ZTO) on In2O3:SnO2 (ITO) substrates by magnetron sputtering. 3-aminopropyltriethoxysilane (APTES) is used to modify the surface of these electrodes. Physical, optical, and structural properties of the electrodes are determined by applying surface profilometry, UV–VIS–NIR spectrophotometry, X-ray diffraction (XRD), and scanning electron microscopy (SEM) measurements. According to these measurements, it has been observed that the ZTO/ITO combination has a higher optical transmission value than the bare ITO, depending on the deposition time and the oxygen concentration used during ZTO deposition. In addition, the ITO thin film has a crystalline structure, while the ZTO thin film has an amorphous structure and both thin films have a good surface morphology. As electrochemical analysis, cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and differential pulse voltammetry (DPV) measurements are performed. As a result of CV and EIS measurements, a remarkable change (63.54%) was observed after applying APTES modification onto the surface of ZTO/ITO electrode, and the ones obtained by DPV showed successful detection of DA by APTES modified ZTO/ITO. In addition, the experiments in the presence of interferences such as ascorbic acid (AA), uric acid (UA), bovine serum albumin (BSA), and fish sperm double-stranded DNA (fsDNA) show that the electrodes can be successfully applied for voltammetric determination of DA. The detection limit of DA was estimated to be 0.013 µM in the range of DA between 0.1 and 1 µM, and sensitivity was calculated and found to be 11.057 μA μg−1 mL cm−2, which means ZTO/ITO electrodes have a good sensitivity.Article Citation - WoS: 4Citation - Scopus: 4Light-Induced Modification of the Schottky Barrier Height in Graphene/Si Based Near-Infrared Photodiodes(Elsevier, 2022) Fidan, Mehmet; Dönmez, Gülçin; Yanılmaz, Alper; Ünverdi, Özhan; Çelebi, CemThe impact of light on the Schottky barrier height (SBH) in p-type graphene/n-type Si (p-Gr/n-Si) based near-infrared photodiodes is investigated. Hall effect and optoelectronic transport measurements carried out under illumination of 905 nm wavelength light showed that zero-bias SBH in such photodiodes can be effectively tuned in a range between 0.7 and 0.9 eV consistent with the variation in their open-circuit voltage. Shockley-Read-Hall model, which considers the charge recombination through mid-gap and interface states at the p-Gr/n-Si heterojunction, is used to explain the experimentally observed nonlinear dependence of SBH on the incident light. Light induced tunability of SBH at the graphene/semiconductor heterojunction is of great importance especially for the development of new generation optically driven devices in which graphene acts as a functioning element.Article Citation - WoS: 6Citation - Scopus: 6Nanolitography Based on Electrospun and Etched Nanofibers(Elsevier, 2021) Noori, Aileen; Döğer, Hilal; Demirhan, Yasemin; Özdemir, Mehtap; Özyüzer, Lütfi; Aygün, Gülnur; Sağlam, ÖzgeIn this study, we propose a new type of nanolithography procedure to fabricate orderly patterned metallic nanostructures using the electrohydrodynamic method and the reactive ion etching process. The electrohydrodynamic process parameters were tuned so as to create patterning with precision, and fibers in nanoscale on silver-coated substrates. We also studied reactive ion etching with different durations on the well-patterned samples. The experiments show that applying a voltage of 400 V resulted in straight patterned fibers with a diameter of 208.7 ? 30.3 nm. The statistical analysis on scanning electron microscope (SEM) images showed a significant difference in the diameter of the fibers fabricated at 400 V compared to those at 500 V and 600 V. We also confirm that the etching process has no affect on the fiber diameter. Moreover, electron dispersive X-Ray spectrometer (EDX) results suggest that an etching duration of 7 min is sufficient to remove the silver coating that is not covered with the fibers, and protect the silver nanostructures underneath the fibers. Utilizing a lowcost nanolithography procedure, we obtain the orderly patterned silver nanostructures for possible integration into miniaturized devices.Article Citation - WoS: 1Citation - Scopus: 1Substrate Effects on Electrical Parameters of Dirac Fermions in Graphene(Elsevier, 2021) Tıraş, Engin; Ardalı, Şükrü; Fırat, Hakan Asaf; Arslan, Engin; Özbay, EkmelThe substrate effects on the electronic transport properties of single-layer graphene on TiO2/Si substrate have been studied. The Hall mobility, sheet carrier density, and transport lifetime were obtained from the temperature-dependent Hall measurements, while the in-plane effective mass, quantum lifetime was obtained from the temperature-dependent variation of the Shubnikov de Haas (SdH) oscillations that were made at 1.8 to 45 K temperature range and up to the magnetic field of 11 T. The measurement results showed that in SLG/TiO2/ Si sample, there were 2.36 +/- 0.12x1016 m-3 amounts of 3D carriers coming from the substrate. In our previous studies, 3D carrier densities were measured as 6.07x1016 m-3 and zero for SLG/SiO2/Si and SLG/SiC sample, respectively. This result shows that the 3D carriers formed in the structure are significantly changed by a substrate. The scattering mechanisms were determined using the zt/zq ratio. The ratio values obtained as 3.66. This value obtained was compared with the values we found for SLG/SiC (zt/zq=1.36) sample and SLG/TiO2/Si (zt/zq=3.08) sample our previous study. The results show that small-angle scattering is dominant in SLG/SiC sample, but large-angle scattering is dominant in SLG/SiO2/Si and SLG/TiO2/Si samples. The charged impurity scattering is the dominant scattering mechanism in SLG/TiO2/Si and SLG/SiO2/Si samples, whereas in SLG/SiC samples, a short-range scattering mechanism such as lattice defects can be said to affect the electronic transport.Article Citation - WoS: 50Citation - Scopus: 52Monitoring the Characteristic Properties of Ga-Doped Zno by Raman Spectroscopy and Atomic Scale Calculations(Elsevier, 2019) Horzum, Şeyda; İyikanat, Fadıl; Senger, Ramazan Tuğrul; Çelebi, Cem; Sbeta, Mohamed; Yıldız, Abdullah; Serin, TülayWe experimentally and theoretically study how the structural and vibrational properties of zinc oxide (ZnO) are modified upon Gallium (Ga) doping. The characteristics of Ga-doped ZnO thin films which are synthesized by sol-gel spin coating method on glass substrates are monitored by using X-ray diffraction (XRD) and Raman scattering measurements. For atomic-level understanding of the experimental findings state-of-the-art density functional theory (DFT) based calculations are also performed. DFT calculations reveal that both the substitution and adsorption of Ga atoms in ZnO are energetically possible and substitutional doping in ZnO is the most favourable scenario. XRD measurements show that all the films are in wurtzite structure and the crystallite size of the films decreases with increasing Ga doping. In addition, Raman analysis show that strong vibrational modes at about 100 and 441 cm(-1) are associated with E-2(low) and E-2(high) phonon branches of ZnO, respectively. While the frequency of the E-2(low) mode downshifts with increasing Ga concentration, the E-2(high) phonon mode is not affected by the Ga doping. Furthermore, E-Ga phonon branch, stemming from the substituted Ga atoms, emerges at low frequencies. It is also seen that the Raman intensity of the E-G(a) peak linearly increases with increasing Ga concentration. Experimental results on the vibrational properties are in good agreement with the ab initio phonon calculations. (C) 2018 Elsevier B.V. All rights reserved.Article Citation - WoS: 22Citation - Scopus: 27Mechanisms Behind Slow Photoresponse Character of Pulsed Electron Deposited Zno Thin Films(Elsevier, 2020) Özdoğan, Mehmet; Çelebi, Cem; Utlu, GökhanSemiconducting Zinc Oxide (ZnO) is ideal candidate for ultraviolet (UV) photodetector due to its promising optoelectronic properties. Photoconductive type ZnO photodetectors, which is fabricated in metal-semiconductor-metal configuration, show mostly very high photoconductivity under UV light, but they are plagued by slow photoresponse time as slow as several tens of hours, even more. Most of the studies claimed that atmospheric adsorbates such as water and oxygen create charge traps states on the surface and remarkably increase both the photoconductivity and response time. There are also limited studies, which claim that the defect states acting as hole trap centers prolong response time significantly. However, the underlying physical mechanism is still unclear. Here we study the effects of both adsorbates and defect-related states on the photoresponse character of Pulsed Electron Deposited ZnO thin films. In order to distinguish between these two mechanisms, we have compared the time-dependent photoresponse measurements of bare-ZnO and SiO2 encapsulated-ZnO thin film samples taken under UV light and high vacuum. We show that the dominant mechanism of photoresponse in ZnO is the adsorption/desorption of oxygen and water molecules even when the measurement is performed in high vacuum. After the encapsulation of sample surface by a thin SiO2 layer, the adsorption/desorption rates can significantly improve, and the effects of these molecules partially removed.Article Citation - WoS: 63Citation - Scopus: 72Ito/Au Multilayer Thin Films on Transparent Polycarbonate With Enhanced Emi Shielding Properties(Elsevier, 2020) Erdoğan, Nursev; Erden, Fuat; Astarlıoğlu, A. Taner; Özdemir, Mehtap; Özbay, Salih; Aygün, Gülnur; Özyüzer, LütfiITO/Au/ITO multilayer thin films were deposited onto polycarbonate substrate via magnetron sputtering technique without intentional heating. The deposition times of both ITO and Au layers were studied to optimize the overall transparency and conductivity. As-prepared thin films were characterized using X-ray diffraction analysis, secondary ion mass spectroscopy, scanning and transmission electron microscopy, atomic force microscopy and physical property measurement system. The optical measurement results revealed that the transmittance of the films were enhanced by increasing the gold deposition time up to 15 s. Beyond this point, further increasing the duration caused a decrease in optical transmittance. Upon optimization of the Au deposition time, the deposition duration of ITO layers was also studied to increase electromagnetic interference (EMI) shielding effectiveness (SE). Maximum EMI SE in this work was measured as 26.8 dB, yielding 99.8% power attenuation, which was verified by simulation results.