Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection

Permanent URI for this collectionhttps://hdl.handle.net/11147/7148

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Author: search.filters.author.Kasap, Safa O.Subject: search.filters.subject.Hydrogenation

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  • Conference Object
    Citation - WoS: 6
    Citation - Scopus: 10
    1/F Noise in Hydrogenated Amorphous Silicon-Germanium Alloys
    (Institute of Electrical and Electronics Engineers, 2003) Johanson, Robert E.; Güneş, Mehmet; Kasap, Safa O.
    Measurements were made of conductance noise of a-Si:H and a-Si 1-xGex:H in two different geometries: one where the current flow is transverse to the surface and the other where it is longitudinal to the surface. Because of the large change in sample resistance between the two geometries, it was not possible to measure both geometries at the same temperature. For both geometries, alloyinzg with up to 40% Ge reduces the noise magnitude by several orders of magnitude over that found in a-Si:H. The decrease is incompatible with several popular noise models. Extrapolating the temperature trends for each geometry shows that it is possible that the noise observed in the transverse samples has the same origin as the higher frequency part of the double power law spectra observed in the longitudinal samples.
  • Conference Object
    Citation - WoS: 1
    Citation - Scopus: 1
    Conductance Fluctuations in Vhf-Pecvd Grown Hydrogenated Microcrystalline Silicon Thin Films
    (Springer Verlag, 2003) Güneş, Mehmet; Johanson, Robert E.; Kasap, Safa O.; Finger, Friedhelm; Lambertz, Andreas
    Coplanar conductance fluctuations or excess noise of undoped hydrogenated microcrystal-line silicon (μc-Si : H) thin films grown by VHF-PECVD from silane-hydrogen mixtures with silane concentrations from 2% to 6% have been studied between room temperature and 470 K. We report that undoped μc-Si : H thin films show similar noise-power spectra to those of undoped a-Si : H films in a coplanar sample geometry. At lower temperatures, the noise with the slope α = 0.60 ± 0.07 and at higher temperatures, the noise with the slope α close to unity dominate the spectrum. The noise magnitude decreases with decreasing silane concentration and becomes strongly temperature dependent with increased crystal unity.