Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Article Citation - WoS: 13Citation - Scopus: 15Effect of Silicon Nitride Coating Thickness on Silicon Wafer Substrates for Signal Enhancement in Laser-Induced Breakdown Spectroscopic Analysis of Liquids(Elsevier, 2022) Kaplan, Dilara; Yalçın, Şerife HanımIt has been shown by previous studies of our group that the use of nitride-coated silicon wafer surfaces as a sample loading substrate in dried-droplet LIBS analysis provided enhancement in plasma emission signal and better detection limits compared to uncoated or oxide-coated silicon wafer surfaces. To further investigate the effect of coating thickness for enhanced sensitivity in dried nano-droplet analysis of liquids, silicon-wafer substrates of different nitride coating thicknesses; 75, 300, 450, and 1000 nm, were comparatively studied. With 75 nm silicon nitride coating, the thin-film effect due to the anti-reflective behavior of the silicon nitride film is observed, and plasma emission signal is enhanced up to three times compared to 300 nm coated substrates. With coating thicknesses of 450 nm and 1000 nm, on the other hand, thermophysical and mechanical properties of the silicon nitride material, like thermal conductivity and hardness, become more dominant factors, leading to higher emission signals for all the elements studied. With 1000 nm coating thickness, enhancement factors of 4.8, 6.4, and 3.7 were obtained for the elements of Pb, Cu, and Cr, respectively. Optimization of the experimental LIBS parameters was conducted, calibration curves were constructed, and analytical figures of merits were determined. Sub-picogram amounts absolute detection limits; 0.7 pg Pb, 0.6 pg Cr, and 0.4 pg Cu, in 500 nanoliter droplets were obtained from the slopes of the calibration curves. The nitride-coated substrates' analytical performance was tested using certified reference solutions, standard water, and real water samples. The materials and the methodology developed can be used for waste-water monitoring of environmental samples by LIBS.Article Citation - WoS: 50Citation - Scopus: 49Validation of Inter-Atomic Potential for Ws2 and Wse2 Crystals Through Assessment of Thermal Transport Properties(Elsevier Ltd., 2018) Mobaraki, Arash; Kandemir, Ali; Yapıcıoğlu, Haluk; Gülseren, Oğuz; Sevik, CemIn recent years, transition metal dichalcogenides (TMDs) displaying astonishing properties are emerged as a new class of two-dimensional layered materials. The understanding and characterization of thermal transport in these materials are crucial for efficient engineering of 2D TMD materials for applications such as thermoelectric devices or overcoming general overheating issues. In this work, we obtain accurate Stillinger-Weber type empirical potential parameter sets for single-layer WS2 and WSe2 crystals by utilizing particle swarm optimization, a stochastic search algorithm. For both systems, our results are quite consistent with first-principles calculations in terms of bond distances, lattice parameters, elastic constants and vibrational properties. Using the generated potentials, we investigate the effect of temperature on phonon energies and phonon linewidth by employing spectral energy density analysis. We compare the calculated frequency shift with respect to temperature with corresponding experimental data, clearly demonstrating the accuracy of the generated inter-atomic potentials in this study. Also, we evaluate the lattice thermal conductivities of these materials by means of classical molecular dynamics simulations. The predicted thermal properties are in very good agreement with the ones calculated from first-principles.Article Citation - WoS: 130Citation - Scopus: 135Thermal Transport Properties of Mos2 and Mose2 Monolayers(IOP Publishing Ltd., 2016) Kandemir, Ali; Yapıcıoğlu, Haluk; Kınacı, Alper; Çalın, Tahir; Sevik, CemThe isolation of single- to few-layer transition metal dichalcogenides opens new directions in the application of two-dimensional materials to nanoelectronics. The characterization of thermal transport in these new low-dimensional materials is needed for their efficient implementation, either for general overheating issues or specific applications in thermoelectric devices. In this study, the lattice thermal conductivities of single-layer MoS2 and MoSe2 are evaluated using classical molecular dynamics methods. The interactions between atoms are defined by Stillinger-Weber-type empirical potentials that are developed to represent the structural, mechanical, and vibrational properties of the given materials. In the parameterization of the potentials, a stochastic optimization algorithm, namely particle swarm optimization, is utilized. The final parameter sets produce quite consistent results with density functional theory in terms of lattice parameters, bond distances, elastic constants, and vibrational properties of both single-layer MoS2 and MoSe2. The predicted thermal properties of both materials are in very good agreement with earlier first-principles calculations. The discrepancies between the calculations and experimental measurements are most probably caused by the pristine nature of the structures in our simulations.Article Citation - WoS: 52Citation - Scopus: 60Promising Thermoelectric Properties of Phosphorenes(IOP Publishing Ltd., 2016) Sevik, Cem; Sevinçli, HaldunElectronic, phononic, and thermoelectric transport properties of single layer black- and blue-phosphorene structures are investigated with first-principles based ballistic electron and phonon transport calculations employing hybrid functionals. The maximum values of room temperature thermoelectric figure of merit, ZT corresponding to armchair and zigzag directions of black-phosphorene, ∼0.5 and ∼0.25, are calculated as rather smaller than those obtained with first-principles based semiclassical Boltzmann transport theory calculations. On the other hand, the maximum value of room temperature ZT of blue-phosphorene is predicted to be substantially high and remarkable values as high as 2.5 are obtained for elevated temperatures. Besides the fact that these figures are obtained at the ballistic limit, our findings mark the strong possibility of high thermoelectric performance of blue-phosphorene in new generation thermoelectric applications.Article Citation - WoS: 17Citation - Scopus: 21Effects of Particle Size and Electrical Resistivity of Filler on Mechanical, Electrical, and Thermal Properties of Linear Low Density Polyethylene-Zinc Oxide Composites(John Wiley and Sons Inc., 2013) Özmıhçı Ömürlü, Filiz; Balköse, DevrimThe effects of particle size and electrical resistivity of zinc oxide (ZnO) on mechanical properties, electrical and thermal conductivities of composites made with linear low density polyethylene (LLDPE) were investigated. Micron sized (mZnO), submicron sized (sZnO), and nano sized (nZnO) powders having resistivities of 1.5 × 106, 1.5 × 109, and 1.7 × 108 were used to prepare composites with 5-20 vol % filler. The tensile strength was lowered and the modulus of elasticity of the composites was increased with ZnO addition. Rather than the particle size of the ZnO, its initial resistivity and aspect ratio affected the resistivity of composites. The resistivity of the LLDPE was lowered from 2.3 × 1016 Ω cm down to 1.4 × 1010 Ω cm with mZnO addition. Thermal conductivity of the composites was increased with ZnO addition 2.5-3 times of the polymer matrix. The composites can be used for electrostatically dissipating and heat sink applications due to their decreased electrical resistivity and increased thermal conductivity.Article Citation - WoS: 7Citation - Scopus: 8Comparison of Electron and Phonon Transport in Disordered Semiconductor Carbon Nanotubes(Springer Verlag, 2013) Sevinçli, Haldun; Lehmann, T.; Ryndyk, D. A.; Cuniberti, G.Charge and thermal conductivities are the most important parameters of carbon nanomaterials as candidates for future electronics. In this paper we address the effects of Anderson type disorder in long semiconductor carbon nanotubes (CNTs) to electron charge conductivity and lattice thermal conductivity using the atomistic Green function approach. The electron and phonon transmissions are analyzed as a function of the length of the disordered nanostructures. The thermal conductance as a function of temperature is calculated for different lengths. Analysis of the transmission probabilities as a function of length of the disordered device shows that both electrons and phonons with different energies display different transport regimes, i.e. quasi-ballistic, diffusive and localization regimes coexist. In the light of the results we discuss heating of the semiconductor device in electronic applications. Disordered nanostructures; Disordered semiconductors; Electron and phonon transports; Electronic application